Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.53 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.53 |
| ▸ | LMNA | P02545 | 2/20 | 0.52 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.52 |
| ▸ | MEN1 | O00255 | 4/20 | 0.51 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.51 |
| ▸ | ESR1 | P03372 | 1/20 | 0.51 |
| ▸ | GAA | P10253 | 1/20 | 0.51 |
| ▸ | ESR2 | Q92731 | 1/20 | 0.51 |
| ▸ | HTT | P42858 | 2/20 | 0.48 |
| ▸ | PAX8 | Q06710 | 1/20 | 0.48 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.47 |
| ▸ | NPC1 | O15118 | 1/20 | 0.47 |
| ▸ | RECQL | P46063 | 1/20 | 0.47 |
| ▸ | RAB9A | P51151 | 1/20 | 0.47 |
| ▸ | MAPT | P10636 | 3/20 | 0.47 |
| ▸ | HTR6 | P50406 | 1/20 | 0.47 |
| ▸ | KEAP1 | Q14145 | 1/20 | 0.46 |
| ▸ | NFE2L2 | Q16236 | 1/20 | 0.46 |
| ▸ | VDR | P11473 | 1/20 | 0.45 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11569096 | 0.84 | ALDH1A1 (0.49) | ALDH1A1TDP1MAPK1MEN1KMT2A | |
| Hydrazine SCHEMBL11809931 | 0.84 | MEN1 (0.49) | ALDH1A1TDP1LMNAMAPK1MEN1 | |
| SCHEMBL9007689 | 0.83 | PAX8 (0.49) | ALDH1A1TDP1LMNAMAPK1MEN1 | |
| SCHEMBL28006670 | 0.81 | ALDH1A1 (0.48) | ALDH1A1TDP1LMNAMAPK1MEN1 | |
| SCHEMBL27777922 | 0.81 | PAX8 (0.50) | ALDH1A1TDP1MEN1KMT2AHTT | |
| SCHEMBL5148413 | 0.81 | ALPL (0.48) | ALDH1A1TDP1MEN1KMT2ARAB9A | |
| SCHEMBL30062473 | 0.81 | ALPL (0.48) | ALDH1A1TDP1MEN1KMT2ARAB9A | |
| SCHEMBL28686234 | 0.80 | KMT2A (0.52) | ALDH1A1TDP1LMNAMEN1KMT2A | |
| SCHEMBL29657729 | 0.80 | LMNA (0.39) | ALDH1A1LMNAMAPK1MEN1KMT2A | |
| SCHEMBL27562654 | 0.80 | LMNA (0.43) | ALDH1A1LMNAMAPK1MEN1KMT2A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 66 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-12353132-B2 | Metallic photoresist patterning and defect improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-08 | — | — | US | claimed |
| CN-111458981-B | Hard mask composition for anti-reflection | OLAS有限公司 | 2024-02-02 | — | — | CN | claimed |
| US-8647526-B2 | Two component etching | MERCK PATENT GESELLSCHAFT MIT BESCHRANKTER HAFTUNG (DE) | 2014-02-11 | — | — | US | claimed |
| US-20120085965-A1 | TWO COMPONENT ETCHING | MERCK PATENT GESELLSCHAFT MIT BESCHRANKTER HAFTUNG (DE) | 2012-04-12 | — | — | US | claimed |
| EP-2438140-A1 | TWO COMPONENT ETCHING | Merck Patent GmbH (DE) | 2012-04-11 | — | — | EP | claimed |
| WO-2010139390-A1 | TWO COMPONENT ETCHING | MERCK PATENT GMBH (DE) | 2010-12-09 | — | — | WO | claimed |
| US-12353132-B2 | Metallic photoresist patterning and defect improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-07-08 | — | — | US | disclosed |
| US-12306536-B2 | Metallic photoresist patterning and defect improvement | TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. (TW) | 2025-05-20 | — | — | US | disclosed |
| CN-111458981-B | Hard mask composition for anti-reflection | OLAS有限公司 | 2024-02-02 | — | — | CN | disclosed |
| US-20230393475-A1 | METALLIC PHOTORESIST PATTERNING AND DEFECT IMPROVEMENT | TAIWAN SEMICONDUCTOR MFG CO LTD (TW) | 2023-12-07 | — | — | US | disclosed |
| CN-116360213-A | Resin composition and photoresist patterning method using the same | 深圳市容大感光科技股份有限公司 | 2023-06-30 | — | — | CN | disclosed |
| CN-115524923-A | Negative photosensitive resin composition, and patterning method and application thereof | 深圳市容大感光科技股份有限公司 | 2022-12-27 | — | — | CN | disclosed |
| CN-107544208-B | Negative photosensitive resin composition, spacer, protective film and liquid crystal display element | 奇美实业股份有限公司 | 2022-05-31 | — | — | CN | disclosed |
| WO-2008156557-A2 | METHOD USING HIGHLY ALKALINE DEVELOPER REGENERATOR COMPOSITION | EASTMAN KODAK COMPANY (US) | 2008-12-24 | — | — | WO | disclosed |
| WO-2008153838-A1 | METHOD OF MAKING LITHOGRAPHIC PRINTING PLATE SUBSTRATE AND IMAGEABLE ELEMENTS | EASTMAN KODAK COMPANY (US) | 2008-12-18 | — | — | WO | disclosed |
| US-20080305435-A1 | METHOD OF MAKING LITHOGRAPHIC PRINTING PLATE SUBSTRATE AND IMAGEABLE ELEMENTS | EASTMAN KODAK COMPANY | 2008-12-11 | — | — | US | disclosed |
| US-20080299491-A1 | HIGHLY ALKALINE DEVELOPER COMPOSITION AND METHODS OF USE | EASTMAN KODAK COMPANY | 2008-12-04 | — | — | US | disclosed |
| US-20080213707-A1 | Graded Spin-on Organic Antireflective Coating for Photolithography | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-09-04 | — | — | US | disclosed |
| US-20080008955-A1 | Graded spin-on organic antireflective coating for photolithography | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2008-01-10 | — | — | US | disclosed |
| US-20080003411-A1 | Aluminum lithographic substrate and method of making | EASTMAN KODAK COMPANY | 2008-01-03 | — | — | US | disclosed |