Known targets — ChEMBL curated mechanism
ABL1ADRA1AADRA1BADRA1DADRA2AADRA2BADRA2CADRB2AGTR1BCL2BCL2A1BCL2L1BCL2L10BCL2L2BCRBRAFCHRM1CHRNA10CHRNA9DRD1DRD2DRD3DRD4DRD5EGFRF2FLT1FLT4GCKGHSRGNRHRGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHTR1AHTR1BHTR1DHTR2AHTR2CHTR3AIDH2KDRKITMAOBMCL1MTTPPP4HBPDGFRBPIK3CAPIK3CBPIK3CDPIK3CGPIK3R1PIK3R2PIK3R3PIK3R5PIKFYVEROCK1ROCK2SLC18A2SLC6A2SLC6A3SLC6A4TACR1TUBA1ATUBA1BTUBA1CTUBA3CTUBA3ETUBA4ATUBBTUBB1TUBB2ATUBB2BTUBB3TUBB4ATUBB4BTUBB6TUBB8gyrAgyrBparCparEpol
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ERCC1 | P07992 | 2/20 | 0.50 |
| ▸ | FEN1 | P39748 | 2/20 | 0.50 |
| ▸ | ERCC4 | Q92889 | 2/20 | 0.50 |
| ▸ | CASP3 | P42574 | 1/20 | 0.47 |
| ▸ | RNASEH1 | O60930 | 1/20 | 0.46 |
| ▸ | KDM4E | B2RXH2 | 4/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 4/20 | 0.42 |
| ▸ | MAPT | P10636 | 3/20 | 0.42 |
| ▸ | KMT2A | Q03164 | 3/20 | 0.42 |
| ▸ | POLB | P06746 | 2/20 | 0.42 |
| ▸ | LMNA | P02545 | 1/20 | 0.42 |
| ▸ | PABPC1 | P11940 | 1/20 | 0.42 |
| ▸ | XBP1 | P17861 | 1/20 | 0.42 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.42 |
| ▸ | HTT | P42858 | 1/20 | 0.42 |
| ▸ | SMARCA2 | P51531 | 1/20 | 0.42 |
| ▸ | NFKB2 | Q00653 | 1/20 | 0.42 |
| ▸ | RELA | Q04206 | 1/20 | 0.42 |
| ▸ | CYP1A2 | P05177 | 2/20 | 0.42 |
| ▸ | TSHR | P16473 | 1/20 | 0.42 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29361703 | 0.86 | ERCC1 (0.62) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| SCHEMBL1410 | 0.86 | ERCC1 (0.62) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| SCHEMBL710689 | 0.86 | ERCC1 (0.62) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| Lithium SCHEMBL1279496 | 0.84 | ERCC1 (0.60) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| Water SCHEMBL4444794 | 0.84 | ERCC1 (0.60) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| SCHEMBL1279494 | 0.84 | ERCC1 (0.60) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| Ammonia Solution, Strong SCHEMBL8656352 | 0.84 | ERCC1 (0.60) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| SCHEMBL30479617 | 0.84 | ERCC1 (0.60) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| Potassium SCHEMBL30855375 | 0.84 | ERCC1 (0.60) | ERCC1FEN1ERCC4CASP3RNASEH1 | |
| SCHEMBL2824836 | 0.84 | ERCC1 (0.60) | ERCC1FEN1ERCC4CASP3RNASEH1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 381 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-102768467-A | Sensitizer for chemical amplification type positive photoresist and application thereof in preparation of chemical amplification type positive photoresist | CHINESE ACAD TECH INST PHYSICS | 2012-11-07 | — | — | CN | claimed |
| CN-102768466-A | Chemical amplification type positive photoresist, preparation method and application thereof in two-photon fine processing | CHINESE ACAD TECH INST PHYSICS | 2012-11-07 | — | — | CN | claimed |
| US-6841332-B2 | Photoresist compound and method for structuring a photoresist layer | INFINEON TECHNOLOGY AG (DE) | 2005-01-11 | — | — | US | claimed |
| US-6746827-B2 | INCLUDING A FILM-FORMING POLYMER CONTAINING MOLECULE GROUPS CONVERTABLE INTO ALKALI-SOLUBLE GROUPS BY ACID-CATALYZED REACTION, A PHOTOACID GENERATOR AND A THERMOBASE GENERATOR; SEMICONDUCTORS; CROSSLINKING INHIBITION; ACCURACY; SMOOTHNESS | INFINEON TECHNOLOGIES AG (DE) | 2004-06-08 | — | — | US | claimed |
| US-20030022111-A1 | Photoresist compound and method for structuring a photoresist layer | POLARIS INNOVATIONS LIMITED (IE) | 2003-01-30 | — | — | US | claimed |
| US-20020160315-A1 | Process for structuring a photoresist layer | POLARIS INNOVATIONS LIMITED (IE) | 2002-10-31 | — | — | US | claimed |
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2026-01-08 | — | — | US | disclosed |
| EP-4675357-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | Shin-Etsu Chemical Co., Ltd. (JP) | 2026-01-07 | — | — | EP | disclosed |
| EP-3382453-B1 | RESIST UNDERLAYER FILM COMPOSITION, PATTERNING PROCESS, AND METHOD FOR FORMING RESIST UNDERLAYER FILM | SHINETSU CHEMICAL CO (JP) | 2023-09-20 | — | — | EP | disclosed |
| EP-2384457-B1 | COATING COMPOSITIONS | MERCK PATENT GMBH (DE) | 2022-07-06 | — | — | EP | disclosed |
| CN-108693713-B | Resist underlayer film material, pattern formation method, and resist underlayer film formation method | 信越化学工业株式会社 | 2022-06-03 | — | — | CN | disclosed |
| CN-106103396-B | Compound, resin, material for forming underlayer film for lithography, pattern formation method, and method for purifying compound or resin | 三菱瓦斯化学株式会社 | 2021-11-30 | — | — | CN | disclosed |
| CN-107949808-B | Material for forming underlayer film for lithography, composition for forming underlayer film for lithography, and method for producing same | 三菱瓦斯化学株式会社 | 2021-10-22 | — | — | CN | disclosed |
| EP-1096318-A1 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-05-02 | — | — | EP | disclosed |
| EP-1085377-A1 | Resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2001-03-21 | — | — | EP | disclosed |
| EP-1053985-A1 | Resist compositions and patterning process | Shin-Etsu Chemical Co., Ltd. (JP) | 2000-11-22 | — | — | EP | disclosed |
| US-6147249-A | ESTER COMPOUND CAPABLE OF FORMING ACID-DECOMPOSABLE POLYMER WHICH CAN BE BLENDED AS BASE RESIN TO FORMULATE RESIST COMPOSITION HAVING HIGHER SENSITIVITY, RESOLUTION AND ETCHING RESISTANCE THAN CONVENTIONAL RESIST COMPOSITIONS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-11-14 | — | — | US | disclosed |
| EP-1031879-A1 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-08-30 | — | — | EP | disclosed |
| EP-1004568-A2 | Novel ester compounds, polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2000-05-31 | — | — | EP | disclosed |
| US-5972560-A | A CROSSLINKED POLYSILOXANE PHOTOACID GENERATOR HAVING HIGH TRANSPARENCY, HIGH RESOLUTION, IMPROVED LATITUDE OF EXPOSURE, PROCESS ADAPTABILITY, AND FOR PRECISE MICRO-PROCESSING | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 1999-10-26 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20260008932-A1 | COMPOSITION FOR FORMING RESIST UNDERLAYER FILM, PATTERNING PROCESS, AND RESIST UNDERLAYER FILM FORMATION PROCESS | ASH2L, ALKBH2, ITGA1 | ERCC1 583/4885FEN1 268/4885ERCC4 1259/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.