SCHEMBL675031

SCHEMBL675031

Cc1cc(C2(c3cc(C)c(O)c(C)c3)CCC(c3cc(C)c(O)c(C)c3)(c3cc(C)c(O)c(C)c3)CC2)cc(C)c1O

nearest known ligand 0.79

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ACHE P22303 1/20 0.79
ESR1 P03372 5/20 0.50
ESR2 Q92731 5/20 0.50
CA1 P00915 1/20 0.48
CA2 P00918 1/20 0.48
OPRM1 P35372 1/20 0.40
ALDH1A1 P00352 3/20 0.36
CYP2C9 P11712 2/20 0.35
GAA P10253 3/20 0.34
LMNA P02545 3/20 0.34
MAPT P10636 2/20 0.34
KDM4E B2RXH2 1/20 0.34
PTGS1 P23219 3/20 0.34
PTGS2 P35354 3/20 0.34
ALOX5 P09917 2/20 0.34
MEN1 O00255 2/20 0.34
KMT2A Q03164 2/20 0.34
CYP1A2 P05177 2/20 0.34
CYP3A4 P08684 1/20 0.34
CYP2D6 P10635 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL674882 0.91 ACHE (0.96) ACHEESR1ESR2CA1CA2
SCHEMBL674887 0.89 ACHE (1.00) ACHEESR1ESR2CA1CA2
SCHEMBL673351 0.89 ACHE (1.00) ACHEESR1ESR2CA1CA2
SCHEMBL85465 0.89 ACHE (1.00) ACHEESR1ESR2CA1CA2
SCHEMBL675004 0.89 ACHE (1.00) ACHEESR1ESR2CA1CA2
SCHEMBL673424 0.89 ACHE (1.00) ACHEESR1ESR2CA1CA2
SCHEMBL10941758 0.89 ACHE (1.00) ACHEESR1ESR2CA1CA2
SCHEMBL673355 0.89 ACHE (1.00) ACHEESR1ESR2CA1CA2
SCHEMBL672596 0.89 ACHE (1.00) ACHEESR1ESR2CA1CA2
SCHEMBL22271939 0.88 ACHE (0.63) ACHEESR1ESR2CA1CA2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 232 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20070106051-A1 Polyfunctional poly(arylene ether) method CITIBANK, N.A., AS COLLATERAL AGENT 2007-05-10 US claimed
US-4277600-A Tetraphenolic compounds and polycarbonates containing the same GENERAL ELECTRIC COMPANY (US) 1981-07-07 US claimed
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2023-12-26 US disclosed
US-11697754-B2 Thermal conductive layer, photosensitive layer, photosensitive composition, manufacturing method for thermal conductive layer, and laminate and semiconductor device FUJIFILM CORPORATION (JP) 2023-07-11 US disclosed
US-20180210339-A1 RESIST COMPOSITION, AND RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE, EACH USING RESIST COMPOSITION FUJIFILM CORPORATION (JP) 2018-07-26 US disclosed
US-10011576-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound FUJIFILM CORPORATION (JP) 2018-07-03 US disclosed
US-20180181003-A1 PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND LAMINATE FUJIFILM CORPORATION (JP) 2018-06-28 US disclosed
US-9958775-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blanks including actinic ray-sensitive or radiation-sensitive film, pattern forming method and photomask FUJIFILM CORPORATION (JP) 2018-05-01 US disclosed
US-20180107113-A1 RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-04-19 US disclosed
US-9929376-B2 Laminate, kit for manufacturing organic semiconductor, and resist composition for manufacturing organic semiconductor FUJIFILM CORPORATION (JP) 2018-03-27 US disclosed
US-20180081270-A1 RADIATION-SENSITIVE COMPOSITION, AMORPHOUS FILM, AND METHOD FOR FORMING RESIST PATTERN MITSUBISHI GAS CHEMICAL COMPANY, INC. (JP) 2018-03-22 US disclosed
US-20070082289-A1 Photosensitive composition, pattern forming method using the photosensitive composition and compound for use in the photosensitive composition FUJI PHOTO FILM CO., LTD. 2007-04-12 US disclosed
US-7202014-B2 Stimulus-sensitive composition, compound and pattern formation method using the stimulation-sensitive composition FUJIFILM CORPORATION (JP) 2007-04-10 US disclosed
US-20070077519-A1 Pattern forming method and resist composition used therefor FUJI PHOTO FILM CO., LTD. 2007-04-05 US disclosed
US-20070072117-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-20070072117-A1 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. 2007-03-29 US disclosed
US-7189492-B2 Photosensitive composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-03-13 US disclosed
US-20070026343-A1 Chemical amplification-type resist composition and production process thereof FUJI PHOTO FILM CO., LTD. 2007-02-01 US disclosed
US-7157205-B2 Intermediate layer composition for multilayer resist process, pattern-forming process using the same, and laminate FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed
WO-1996001865-A1 MULTIHYDROXY-FUNCTIONAL OLIGOPHENYLENE OXIDE DSM N.V. (NL) 1996-01-25 WO disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-11852970-B2 Material for lithography, production method therefor, composition for lithography, pattern formation method, compound, resin, and method for purifying the compound or the resin SLC39A11, CROCC, TERB1 ACHE 1890/4885ESR1 3319/4885ESR2 3628/4885
US-10011576-B2 Actinic ray-sensitive or radiation-sensitive resin composition, actinic ray-sensitive or radiation-sensitive film, mask blank provided with actinic ray-sensitive or radiation-sensitive film, pattern forming method, method for manufacturing electronic device, electronic device, and compound RARA, RXRA, RARG ACHE 498/4885ESR1 185/4885ESR2 521/4885
US-20180107113-A1 RESIST BASE MATERIAL, RESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN CROCC, REV1, PARG ACHE 4817/4885ESR1 1004/4885ESR2 1781/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.