SCHEMBL677047

SCHEMBL677047

C[CH]c1ccc(C23CC4CC(CC(C4)C2)C3)cc1

nearest known ligand 0.57

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 4/20 0.57
LMNA P02545 3/20 0.57
GAA P10253 2/20 0.49
NPC1 O15118 1/20 0.49
EPHX2 P34913 7/20 0.47
MEN1 O00255 3/20 0.47
KMT2A Q03164 3/20 0.47
POLB P06746 2/20 0.47
GFER P55789 1/20 0.47
MAPT P10636 1/20 0.46
L3MBTL1 Q9Y468 1/20 0.44
RAB9A P51151 1/20 0.41
GRIN2D O15399 1/20 0.41
GRIN3B O60391 1/20 0.41
GRIN1 Q05586 1/20 0.41
GRIN2A Q12879 1/20 0.41
GRIN2B Q13224 1/20 0.41
GRIN2C Q14957 1/20 0.41
GRIN3A Q8TCU5 1/20 0.41
HTT P42858 1/20 0.37

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2763437 0.82 LMNA (0.77) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL2776531 0.80 ALDH1A1 (0.57) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL548601 0.80 ALDH1A1 (0.57) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL10012164 0.80 ALDH1A1 (0.57) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL28326184 0.78 ALDH1A1 (0.55) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL677279 0.78 MEN1 (0.46) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL5295731 0.77 LMNA (0.63) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL28060058 0.74 LMNA (0.50) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL28803691 0.74 LMNA (0.50) ALDH1A1LMNAGAANPC1EPHX2
SCHEMBL13636765 0.74 LMNA (0.50) ALDH1A1LMNAGAANPC1EPHX2

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
EP-1367439-B1 Radiation-sensitive composition FUJIFILM CORP (JP) 2012-08-01 EP disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
EP-2399168-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM Corporation (JP) 2011-12-28 EP disclosed
WO-2010150917-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2010-12-29 WO disclosed
EP-1467251-B1 Positive resist composition FUJIFILM CORP (JP) 2010-09-08 EP disclosed
EP-1465010-B1 Positive resist composition FUJIFILM CORP (JP) 2009-10-21 EP disclosed
US-20080096130-A1 POSITIVE RESIST COMPOSITION FUJIFILM CORPORATION 2008-04-24 US disclosed
US-7361446-B2 Sensitivity, high resolution, good pattern profile, used for super-microlithography FUJIFILM CORPORATION (JP) 2008-04-22 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed
US-6743565-B2 POLYSTYRENE OXY DERIVATIVES THAT DECOMPOSE UNDER AN ACID TO INCREASE THE SOLUBILITY IN AN ALKALI DEVELOPER AND AN ACID GENERATOR FUJI PHOTO FILM CO., LTD. (JP) 2004-06-01 US disclosed
US-6727033-B2 A POSITIVE RESIST COMPOSITION COMPRISING A RESIN (A), WHICH IS DECOMPOSED BY THE ACTION OF AN ACID TO INCREASE SOLUBILITY IN AN ALKALI DEVELOPING SOLUTION, CONTAINING A STRUCTURAL UNIT INCLUDING A GROUP REPRESENTED BY FORMULA (X) DEFINED IN FUJI PHOTO FILM CO., LTD. (JP) 2004-04-27 US disclosed
US-20040033437-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2004-02-19 US disclosed
US-6692883-B2 GENERATING ACID; ADJUSTMENT SOLUBILITY IN ALKLAINE DEVELOPER FUJI PHOTO FILM CO., LTD. (JP) 2004-02-17 US disclosed
EP-1367439-A1 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2003-12-03 EP disclosed
US-6630280-B1 Resin and compound that generates an arylsulfonic acid when exposed to actinic radiation; sensitivity; resolution; smoothness FUJI PHOTO FILM CO., LTD. (JP) 2003-10-07 US disclosed
US-20030134221-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-07-17 US disclosed
US-20030108811-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2003-06-12 US disclosed
US-20020012866-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2002-01-31 US disclosed
US-6207343-B1 RESIN CONTAINING GROUPS WHICH DECOMPOSE BY THE ACTION OF AN ACID TO ENHANCE ITS SOLUBILITY IN AN ALKALINE DEVELOPING SOLUTION AND A COMPOUND WHICH GENERATES AN ACID UPON IRRADIATION WITH ACTINIC RAYS OR RADIATION FUJI PHOTO FILM CO., LTD. (JP) 2001-03-27 US disclosed