SCHEMBL678397

SCHEMBL678397

C=C(C)C(=O)OC1(CC)C2CC3CC(C2)CC1(O)C3

nearest known ligand 0.34

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
HSD11B1 P28845 1/20 0.32
EPHX2 P34913 2/20 0.31
ALDH1A1 P00352 2/20 0.31
LMNA P02545 1/20 0.31
MEN1 O00255 2/20 0.30
KMT2A Q03164 2/20 0.30
L3MBTL1 Q9Y468 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL677931 0.90 MEN1 (0.32) HSD11B1EPHX2ALDH1A1MEN1KMT2A
SCHEMBL15205287 0.87 EPHX2 (0.31) EPHX2ALDH1A1LMNA
SCHEMBL5832827 0.87 EPHX2 (0.31) EPHX2ALDH1A1LMNA
SCHEMBL1218496 0.82 HSD11B1 (0.32) HSD11B1
SCHEMBL5004543 0.79 HSD11B1 (0.32) HSD11B1ALDH1A1LMNAMEN1KMT2A
SCHEMBL15206176 0.79 MEN1 (0.32) EPHX2ALDH1A1MEN1KMT2AL3MBTL1
SCHEMBL1217235 0.79 ALDH1A1 (0.33) EPHX2ALDH1A1
SCHEMBL677901 0.79 GLA (0.32) HSD11B1ALDH1A1
SCHEMBL1217916 0.77 HSD11B1 (0.34) HSD11B1EPHX2ALDH1A1
SCHEMBL44041 0.76 ALDH1A1 (0.35) HSD11B1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 28 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9598520-B2 Radiation-sensitive resin composition, polymer and method for forming a resist pattern JSR CORPORATION (JP) 2017-03-21 US disclosed
EP-2503392-B1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND RESIST PATTERN FORMATION METHOD JSR CORP (JP) 2015-04-15 EP disclosed
US-8815490-B2 Radiation-sensitive resin composition, polymer, and method for forming resist pattern JSR CORPORATION (JP) 2014-08-26 US disclosed
US-20120295197-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND METHOD FOR FORMING A RESIST PATTERN JSR CORPORATION (JP) 2012-11-22 US disclosed
EP-2503392-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER AND RESIST PATTERN FORMATION METHOD JSR Corporation (JP) 2012-09-26 EP disclosed
US-20120094234-A1 RADIATION-SENSITIVE RESIN COMPOSITION, POLYMER, AND METHOD FOR FORMING RESIST PATTERN JSR CORPORATION (JP) 2012-04-19 US disclosed
US-20110275774-A1 ORGANOANTIMONY COMPOUND, PROCESS FOR PREPARING SAME, LIVING RADICAL POLYMERIZATION INITIATOR, PROCESS FOR PRODUCING POLYMER WITH USE OF SAME, AND THE POLYMER YAMAGO SHIGERU 2011-11-10 US disclosed
US-8008414-B2 Organic antimony compound, process for producing the same, living radical polymerization initiator, process for producing polymer using the same, and polymer OTSUKA CHEMICAL CO., LTD. (JP) 2011-08-30 US disclosed
EP-1829883-B1 ORGANIC BISMUTH COMPOUND, METHOD FOR PRODUCING SAME, LIVING RADICAL POLYMERIZATION INITIATOR, METHOD FOR PRODUCING POLYMER USING SAME, AND POLYMER OTSUKA CHEMICAL CO LTD (JP) 2011-08-17 EP disclosed
EP-1767539-B1 ORGANIC ANTIMONY COMPOUND, PROCESS FOR PRODUCING THE SAME, LIVING RADICAL POLYMERIZATION INITIATOR, PROCESS FOR PRODUCING POLYMER USING THE SAME, AND POLYMER OTSUKA CHEMICAL CO LTD (JP) 2011-07-27 EP disclosed
US-20060281022-A1 Polymeric compound containing a repeated unit having a 2-oxatricyclo [4.2.1.0 4.8] nonan-3-one ring and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-12-14 US disclosed
US-7105268-B2 Polymer for photoresist and resin compositions therefor DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-09-12 US disclosed
EP-1681307-A1 POLYMERIC COMPOUND CONTAINING REPEATING UNIT HAVING 2-OXATRICYCLO[4.2.1.04,8]NONAN-3-ONE RING, AND PHOTORESIST RESIN COMPOSITION Daicel Chemical Industries, Ltd. (JP) 2006-07-19 EP disclosed
EP-1676869-A1 PHOTORESIST RESIN AND PHOTORESIST RESIN COMPOSITION Daicel Chemical Industries, Ltd. (JP) 2006-07-05 EP disclosed
US-7033726-B2 Photoresist polymeric compound and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-04-25 US disclosed
US-20050238990-A1 Photoresist resin and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2005-10-27 US disclosed
EP-1584634-A1 POLYMERIC COMPOUND FOR PHOTORESIST AND RESIN COMPOSITION FOR PHOTORESIST Daicel Chemical Industries, Ltd. (JP) 2005-10-12 EP disclosed
US-20050014087-A1 Photoresist polymeric compound and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2005-01-20 US disclosed
EP-1354897-A1 POLYMER FOR PHOTORESIST AND RESIN COMPOSITIONS THEREFOR Daicel Chemical Industries, Ltd. (JP) 2003-10-22 EP disclosed
US-20030148210-A1 Polymer for photoresist and resin compositions therefor DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2003-08-07 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20030148210-A1 Polymer for photoresist and resin compositions therefor LCP1, DOT1L, PRMT1 HSD11B1 2935/4885EPHX2 1847/4885ALDH1A1 1006/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.