SCHEMBL682253

SCHEMBL682253

CCC(C)(C)C(=O)OC(C)C(F)(F)S(=O)(=O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19214622 0.88
SCHEMBL15945495 0.83
SCHEMBL92306 0.83
SCHEMBL26932055 0.83
SCHEMBL7602475 0.82 PRKCA (0.34)
SCHEMBL12026714 0.81
SCHEMBL14208737 0.81
SCHEMBL107004 0.80 MMP8 (0.33)
SCHEMBL14902735 0.79
SCHEMBL9963748 0.79 ALDH1A1 (0.35)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 228 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20230367214-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-11-16 US disclosed
US-11786160-B2 Bio-electrode composition, bio-electrode, and method for manufacturing bio-electrode SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-17 US disclosed
US-11773059-B2 Onium salt, chemically amplified negative resist composition, and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-10-03 US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 US disclosed
US-20230168584-A1 CONDUCTIVE POLYMER COMPOSITION, COATED PRODUCT, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-06-01 US disclosed
US-20230137472-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-05-04 US disclosed
US-10023752-B2 Conductive material and substrate SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-07-17 US disclosed
US-10012902-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-07-03 US disclosed
US-20180180998-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND RESIST PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-06-28 US disclosed
US-9969829-B2 Polymer compound, negative resist composition, laminate, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120009527-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-01-12 US disclosed
US-20110294070-A1 MONOMER, POLYMER, CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-12-01 US disclosed
US-20110236826-A1 PATTERNING PROCESS, RESIST COMPOSITION, AND ACETAL COMPOUND SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-09-29 US disclosed
US-20110200919-A1 CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-18 US disclosed
US-20110189607-A1 NOVEL SULFONIUM SALT, POLYMER, METHOD FOR PRODUCING THE POLYMER, RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-08-04 US disclosed
US-20110183263-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-20110177462-A1 PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-21 US disclosed
US-20110171580-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-07-14 US disclosed
US-20100304302-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERN FORMING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2010-12-02 US disclosed