SCHEMBL107004

SCHEMBL107004

CCC(C)(C)C(=O)OC(C)C(F)(F)F

nearest known ligand 0.33

Predicted protein targets (top 1)

geneUniProtsupporting neighboursconfidence
MMP8 P22894 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL2608005 0.89
SCHEMBL2607993 0.88 MMP8 (0.32) MMP8
SCHEMBL13201620 0.88
SCHEMBL10170975 0.87
SCHEMBL12026714 0.85
SCHEMBL29321016 0.84 MMP8 (0.33) MMP8
SCHEMBL107788 0.84 MMP8 (0.36) MMP8
SCHEMBL131327 0.83 GRM1 (0.37) MMP8
SCHEMBL12108402 0.83
SCHEMBL13005920 0.83

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 638 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12038692-B2 Method for producing substrate with patterned film and fluorine-containing copolymer CENTRAL GLASS COMPANY, LIMITED (JP) 2024-07-16 US disclosed
US-20240231231-A1 METHOD FOR FORMING RESIST UNDERLAYER FILM, METHOD FOR PRODUCING SEMICONDUCTOR SUBSTRATE, COMPOSITION, AND RESIST UNDERLAYER FILM JSR CORPORATION (JP) 2024-07-11 US disclosed
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-12023710-B2 Fluorinated polymers for corrosion protection of metal UNIVERSITY OF NORTH TEXAS (US) 2024-07-02 US disclosed
US-11914300-B2 Manufacturing method of semiconductor chip, and kit FUJIFILM CORPORATION (JP) 2024-02-27 US disclosed
US-11835860-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2023-12-05 US disclosed
US-20230375925-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, COMPOUND, AND RESIN FUJIFILM CORPORATION (JP) 2023-11-23 US disclosed
US-11822241-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-11-21 US disclosed
US-20110020755-A1 METHOD OF FORMING PATTERNS FUJIFILM CORPORATION (JP) 2011-01-27 US disclosed
US-20110014571-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-20110014570-A1 RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-01-20 US disclosed
US-20110008735-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-13 US disclosed
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-01-13 US disclosed
US-20110003247-A1 PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2011-01-06 US disclosed
US-20100323305-A1 PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-12-23 US disclosed
US-20100239984-A1 PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2010-09-23 US disclosed
US-20100168337-A1 GRADED TOPCOAT MATERIALS FOR IMMERSION LITHOGRAPHY INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2010-07-01 US disclosed
US-20100015554-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2010-01-21 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (6 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20110008731-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION RER1, XRN2, RXRA MMP8 2666/4885
US-11820735-B2 Salt, acid generator, resist composition and method for producing resist pattern RER1, LPAR1, TLR7 MMP8 1018/4885
US-20110008735-A1 SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS ETV6, ETV1, VPS4B MMP8 2662/4885
US-11822244-B2 Compound, resin, resist composition and method for producing resist pattern RER1, AFF1, AFF4 MMP8 2416/4885
US-20110003247-A1 PHOTOACID GENERATOR, RESIST COMPOSITION, AND PATTERNING PROCESS GRHPR, GLRA3, GLRA1 MMP8 3690/4885
US-11822241-B2 Salt, acid generator, resist composition and method for producing resist pattern H1-10, H1-0, CHRM1 MMP8 2345/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.