SCHEMBL682798

SCHEMBL682798

CCc1cc(C(C)CC)ccc1O

nearest known ligand 0.62

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
GAA P10253 5/20 0.62
ALDH1A1 P00352 4/20 0.62
ALOX15 P16050 2/20 0.62
USP2 O75604 1/20 0.62
PKM P14618 1/20 0.62
HPGD P15428 1/20 0.62
HSD17B10 Q99714 1/20 0.62
HDAC4 P56524 1/20 0.54
HDAC2 Q92769 1/20 0.54
HDAC8 Q9BY41 1/20 0.54
ESR1 P03372 3/20 0.47
ESR2 Q92731 3/20 0.47
LMNA P02545 3/20 0.46
HTT P42858 2/20 0.46
MAPT P10636 2/20 0.45
MEN1 O00255 1/20 0.45
TP53 P04637 1/20 0.45
MAPK1 P28482 1/20 0.45
KMT2A Q03164 1/20 0.45
BACE1 P56817 1/20 0.44

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL112701 0.87 PKM (0.61) GAAALDH1A1ALOX15USP2PKM
SCHEMBL11961094 0.85 GAA (0.59) GAAALDH1A1ALOX15USP2PKM
SCHEMBL16736815 0.85 GAA (0.58) GAAALDH1A1ALOX15USP2PKM
SCHEMBL5167176 0.84 RNASEH1 (0.55) GAAALDH1A1ALOX15USP2PKM
SCHEMBL920814 0.84 ESR1 (0.50) GAAALDH1A1ALOX15USP2PKM
SCHEMBL11002601 0.84 GAA (0.57) GAAALDH1A1ALOX15USP2PKM
Hydrochloric Acid SCHEMBL11680516 0.84 GAA (0.62) GAAALDH1A1ALOX15USP2PKM
SCHEMBL2284641 0.82 ESR1 (0.48) GAAALDH1A1ALOX15USP2PKM
SCHEMBL19680377 0.82 ALDH1A1 (0.56) GAAALDH1A1ALOX15USP2PKM
SCHEMBL3663532 0.82 FFAR1 (0.47) GAAALDH1A1ALOX15USP2PKM

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 35 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20180120705-A1 PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-9223204-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern-forming method using the same FUJITSU CORPORATION (JP) 2015-12-29 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-9005870-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming pattern using the composition FUJIFILM CORPORATION (JP) 2015-04-14 US disclosed
US-8735048-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film using the composition and pattern forming method FUJIFILM CORPORATION (JP) 2014-05-27 US disclosed
US-20140127627-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN-FORMING METHOD USING THE SAME ITO TAKAYUKI (JP) 2014-05-08 US disclosed
US-8642245-B2 Actinic-ray- or radiation-sensitive resin composition and method of forming a pattern using the same FUJIFILM CORPORATION (JP) 2014-02-04 US disclosed
US-8574814-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the composition FUJIFILM CORPORATION (JP) 2013-11-05 US disclosed
US-8546063-B2 Organic solvent development or multiple development pattern-forming method using electron beams or EUV rays FUJIFILM CORPORATION (JP) 2013-10-01 US disclosed
US-8507174-B2 Positive resist composition, pattern forming method using the composition, and compound for use in the composition FUJIFILM CORPORATION (JP) 2013-08-13 US disclosed
US-20100151380-A1 RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-06-17 US disclosed
US-20100136481-A1 RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-06-03 US disclosed
US-20100124719-A1 Polymer and Resist Composition Comprising the Same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-05-20 US disclosed
US-20100081085-A1 Polymer and Resist Composition Comprising the Same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-04-01 US disclosed
US-7504193-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2009-03-17 US disclosed
US-20090047598-A1 RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY, OR EUV, AND PATTERN-FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-02-19 US disclosed
US-7410747-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2008-08-12 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7179579-B2 Radiation-sensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2007-02-20 US disclosed
US-7157208-B2 Positive resist composition and pattern forming method using the same FUJI PHOTO FILM CO., LTD. (JP) 2007-01-02 US disclosed