Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | PKM | P14618 | 2/20 | 0.61 |
| ▸ | USP2 | O75604 | 1/20 | 0.61 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.61 |
| ▸ | GAA | P10253 | 1/20 | 0.61 |
| ▸ | HPGD | P15428 | 1/20 | 0.61 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.61 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.61 |
| ▸ | ADRB2 | P07550 | 9/20 | 0.50 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.50 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.50 |
| ▸ | TSHR | P16473 | 1/20 | 0.50 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.50 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.50 |
| ▸ | ADRB1 | P08588 | 1/20 | 0.50 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.49 |
| ▸ | HDAC4 | P56524 | 1/20 | 0.49 |
| ▸ | HDAC2 | Q92769 | 1/20 | 0.49 |
| ▸ | HDAC8 | Q9BY41 | 1/20 | 0.49 |
| ▸ | PMP22 | Q01453 | 1/20 | 0.48 |
| ▸ | KLF10 | Q13118 | 1/20 | 0.46 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL682798 | 0.87 | GAA (0.62) | PKMUSP2ALDH1A1GAAHPGD | |
| SCHEMBL18713658 | 0.85 | ALDH1A1 (0.50) | PKMUSP2ALDH1A1GAAHPGD | |
| SCHEMBL11961094 | 0.84 | GAA (0.59) | PKMUSP2ALDH1A1GAAHPGD | |
| SCHEMBL29508269 | 0.83 | ADRB2 (0.51) | PKMADRB2CYP1A2CYP2D6TSHR | |
| SCHEMBL213221 | 0.83 | SHBG (0.54) | PKMUSP2ALDH1A1GAAHPGD | |
| SCHEMBL10215349 | 0.82 | ADRB2 (0.54) | PKMALDH1A1GAAADRB2CYP1A2 | |
| SCHEMBL11002601 | 0.82 | GAA (0.57) | PKMUSP2ALDH1A1GAAHPGD | |
| Hydrochloric Acid SCHEMBL11680516 | 0.82 | GAA (0.62) | PKMUSP2ALDH1A1GAAHPGD | |
| SCHEMBL19236388 | 0.81 | ADRB2 (0.62) | ADRB2CYP1A2CYP2D6TSHRNFKB1 | |
| SCHEMBL14291852 | 0.81 | ADRB2 (0.62) | ADRB2CYP1A2CYP2D6TSHRNFKB1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 46 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20180120701-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2018-05-03 | — | — | US | disclosed |
| US-20180087010-A1 | PRE-RINSING LIQUID, PRE-RINSING TREATMENT METHOD, AND PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2018-03-29 | — | — | US | disclosed |
| US-20170351176-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, MASK BLANK INCLUDING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-12-07 | — | — | US | disclosed |
| US-9829796-B2 | Pattern formation method, active light-sensitive or radiation-sensitive resin composition, resist film, production method for electronic device using same, and electronic device | FUJIFILM CORPORATION (JP) | 2017-11-28 | — | — | US | disclosed |
| US-20170242338-A1 | ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-08-24 | — | — | US | disclosed |
| US-20170176858-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, RESIST COMPOSITION AND RESIST FILM | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-20170174801-A1 | NON-CHEMICAL AMPLIFICATION TYPE RESIST COMPOSITION, NON-CHEMICAL AMPLIFICATION TYPE RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE | FUJIFILM CORPORATION (JP) | 2017-06-22 | — | — | US | disclosed |
| US-9651863-B2 | Pattern forming method, active light sensitive or radiation sensitive resin composition, resist film, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2017-05-16 | — | — | US | disclosed |
| US-20170121437-A1 | PATTERN FORMING METHOD, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, ELECTRONIC DEVICE, ACTIVE-LIGHT-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM AND MASK BLANK | FUJIFILM CORPORATION (JP) | 2017-05-04 | — | — | US | disclosed |
| US-20160349619-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2016-12-01 | — | — | US | disclosed |
| US-8124310-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20120003590-A1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-05 | — | — | US | disclosed |
| US-7989137-B2 | Resist composition and pattern-forming method using the same | FUJIFILM CORPORATION (JP) | 2011-08-02 | — | — | US | disclosed |
| US-20110159433-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION | FUJIFILM CORPORATION (JP) | 2011-06-30 | — | — | US | disclosed |
| US-20100323305-A1 | PATTERN FORMING METHOD, RESIST COMPOSITION FOR MULTIPLE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, DEVELOPER FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD, AND RINSING SOLUTION FOR NEGATIVE DEVELOPMENT USED IN THE PATTERN FORMING METHOD | FUJIFILM CORPORATION (JP) | 2010-12-23 | — | — | US | disclosed |
| US-7799506-B2 | Positive resist composition and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2010-09-21 | — | — | US | disclosed |
| US-20090087784-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087776-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20090087789-A1 | RESIST COMPOSITION AND PATTERN-FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2009-04-02 | — | — | US | disclosed |
| US-20080248419-A1 | POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-10-09 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20110159433-A1 | PHOTOSENSITIVE COMPOSITION, PATTERN-FORMING METHOD USING THE COMPOSITION, AND RESIN USED IN THE COMPOSITION | SUN2, LCP1, PHYKPL | PKM 3616/4885USP2 4564/4885ALDH1A1 2816/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.