Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | IDO1 | P14902 | 1/20 | 0.50 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.44 |
| ▸ | L3MBTL1 | Q9Y468 | 1/20 | 0.44 |
| ▸ | SIGMAR1 | Q99720 | 6/20 | 0.43 |
| ▸ | LMNA | P02545 | 2/20 | 0.43 |
| ▸ | SLC6A2 | P23975 | 2/20 | 0.43 |
| ▸ | SLC6A4 | P31645 | 2/20 | 0.43 |
| ▸ | SLC6A3 | Q01959 | 2/20 | 0.43 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.43 |
| ▸ | TP53 | P04637 | 1/20 | 0.43 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.43 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.43 |
| ▸ | MAPT | P10636 | 1/20 | 0.43 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.43 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.43 |
| ▸ | TSHR | P16473 | 1/20 | 0.43 |
| ▸ | NFKB1 | P19838 | 1/20 | 0.43 |
| ▸ | MAPK1 | P28482 | 1/20 | 0.43 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.43 |
| ▸ | THPO | P40225 | 1/20 | 0.43 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL683437 | 0.95 | L3MBTL1 (0.50) | IDO1TDP1L3MBTL1SIGMAR1SLC6A2 | |
| SCHEMBL682845 | 0.89 | CA1 (0.40) | IDO1TDP1L3MBTL1SIGMAR1RAB9A | |
| SCHEMBL2918641 | 0.84 | IDO1 (0.48) | IDO1SIGMAR1LMNASLC6A2SLC6A4 | |
| SCHEMBL682714 | 0.84 | KCNH2 (0.43) | TDP1L3MBTL1LMNACYP1A2MAPT | |
| SCHEMBL12530260 | 0.82 | IDO1 (0.55) | IDO1L3MBTL1SIGMAR1LMNASLC6A2 | |
| SCHEMBL683151 | 0.82 | CALM1 (0.51) | TDP1L3MBTL1SIGMAR1SLC6A4SMN1; SMN2 | |
| SCHEMBL682092 | 0.82 | IDO1 (0.42) | IDO1TDP1L3MBTL1LMNASMN1; SMN2 | |
| SCHEMBL5543309 | 0.80 | IDO1 (0.44) | IDO1LMNASLC6A2SLC6A4SLC6A3 | |
| SCHEMBL9760951 | 0.79 | IDO1 (0.52) | IDO1SIGMAR1LMNASLC6A2SLC6A4 | |
| SCHEMBL682727 | 0.79 | HRH1 (0.42) | TDP1L3MBTL1LMNACYP1A2MAPT |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 41 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| EP-2090932-B1 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORP (JP) | 2017-05-31 | — | — | EP | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-9090722-B2 | Chemical amplification resist composition, and mold preparation method and resist film using the same | FUJIFILM CORPORATION (JP) | 2015-07-28 | — | — | US | disclosed |
| US-8426103-B2 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8426103-B2 | Positive resist composition for use with electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2013-04-23 | — | — | US | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-8110333-B2 | Resist composition containing novel sulfonium compound, pattern-forming method using the resist composition, and novel sulfonium compound | FUJIFILM CORPORATION (JP) | 2012-02-07 | — | — | US | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-20120006788-A1 | CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-01-12 | — | — | US | disclosed |
| US-8092978-B2 | Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same | FUJIFILM CORPORATION (JP) | 2012-01-10 | — | — | US | disclosed |
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | FUJIFILM CORPORATION (JP) | 2009-02-12 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-7361446-B2 | Sensitivity, high resolution, good pattern profile, used for super-microlithography | FUJIFILM CORPORATION (JP) | 2008-04-22 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080085468-A1 | microlithography; ultrafine processing of semiconductor using electron beam, X-ray or deep UV; high sensitivity, high resolution and good line edge roughness; suppression of vaporized outgas; a polystyrene with an acid-decomposable group; 10-tolyl-9-oxothioxanthenium nonafluorobutanesulfonate | FUJIFILM CORPORATION (JP) | 2008-04-10 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-20080081282-A1 | RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORPORATION (JP) | 2008-04-03 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
| US-7179579-B2 | Radiation-sensitive composition | FUJI PHOTO FILM CO., LTD. (JP) | 2007-02-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20090042124-A1 | RESIST COMPOSITION CONTAINING NOVEL SULFONIUM COMPOUND, PATTERN-FORMING METHOD USING THE RESIST COMPOSITION, AND NOVEL SULFONIUM COMPOUND | ADH5, SRRM2, ADH1A | IDO1 4787/4885TDP1 4667/4885L3MBTL1 4584/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.