SCHEMBL683190

SCHEMBL683190

CC1Cc2cc(O)ccc2C1C

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
SHBG P04278 1/20 0.44
CHRNB2 P17787 1/20 0.44
CHRNA4 P43681 1/20 0.44
OPRK1 P41145 2/20 0.41
OPRM1 P35372 1/20 0.41
OPRD1 P41143 1/20 0.41
MEN1 O00255 2/20 0.40
GLA P06280 2/20 0.40
KMT2A Q03164 2/20 0.40
GAA P10253 1/20 0.40
KDM4E B2RXH2 1/20 0.40
NPC1 O15118 1/20 0.40
NR1I2 O75469 1/20 0.40
GMNN O75496 1/20 0.40
USP2 O75604 1/20 0.40
ALDH1A1 P00352 1/20 0.40
LMNA P02545 1/20 0.40
TP53 P04637 1/20 0.40
CYP1A2 P05177 1/20 0.40
HSP90AA1 P07900 1/20 0.40

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13899948 0.84 OPRK1 (0.47) OPRK1OPRM1OPRD1DRD2DRD3
SCHEMBL14489310 0.84 OPRK1 (0.47) OPRK1OPRM1OPRD1DRD2DRD3
SCHEMBL683191 0.81 ESR1 (0.50) SHBGOPRM1MEN1KMT2AALDH1A1
SCHEMBL18350079 0.77 DRD2 (0.50) OPRK1MEN1GLAKMT2AGAA
SCHEMBL14827351 0.73 CHRNA7 (0.49) CHRNB2CHRNA4OPRM1DRD2DRD3
SCHEMBL13105750 0.73 OPRD1 (0.32) OPRD1SLC22A12
SCHEMBL12133515 0.73 CHRNB2 (0.38) CHRNB2CHRNA4SLC22A12
SCHEMBL12214746 0.73 PPARG (0.46) SHBGCHRNB2CHRNA4OPRK1OPRM1
SCHEMBL13799411 0.72 DRD2 (0.50) OPRK1OPRM1OPRD1MEN1GLA
SCHEMBL31505403 0.72 CHRNB2 (0.44) SHBGCHRNB2CHRNA4OPRK1OPRM1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 59 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-11693316-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-07-04 US disclosed
US-11656549-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-23 US disclosed
US-11644751-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-05-09 US disclosed
US-20230139009-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2023-05-04 US disclosed
US-10423068-B2 Active-light-sensitive or radiation-sensitive resin composition, active-light-sensitive or radiation-sensitive film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2019-09-24 US disclosed
US-9969829-B2 Polymer compound, negative resist composition, laminate, patterning process, and compound SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-05-15 US disclosed
US-20180120705-A1 PATTERN FORMING METHOD AND ELECTRONIC DEVICE MANUFACTURING METHOD FUJIFILM CORPORATION (JP) 2018-05-03 US disclosed
US-RE46765-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-RE46736-E1 Chemically amplified negative resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-9904172-B2 Shrink material and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-02-27 US disclosed
US-20120301817-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM USING THE COMPOSITION AND PATTERN FORMING METHOD FUJIFILM CORPORATION (JP) 2012-11-29 US disclosed
US-20120231393-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-09-13 US disclosed
US-20120219887-A1 CHEMICALLY AMPLIFIED NEGATIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2012-08-30 US disclosed
US-20120082939-A1 ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE RESIN COMPOSITION, AND ACTIVE LIGHT RAY SENSITIVE OR RADIOACTIVE RAY SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2012-04-05 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20110318693-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST FILM AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2011-12-29 US disclosed
US-20110183263-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-07-28 US disclosed
US-7510820-B2 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2009-03-31 US disclosed
US-7416833-B2 Photoresist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2008-08-26 US disclosed
US-20070122740-A1 Resist undercoat-forming material and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-31 US disclosed