SCHEMBL683291

SCHEMBL683291

CCC(C)c1ccc(OC(C)OCCOc2ccc(Oc3ccccc3)cc2)cc1

nearest known ligand 0.49

Predicted protein targets (top 16)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 5/20 0.49
ALDH1A1 P00352 3/20 0.46
TSHR P16473 1/20 0.46
SLC7A5 Q01650 1/20 0.44
MEN1 O00255 1/20 0.42
KMT2A Q03164 1/20 0.42
TDP1 Q9NUW8 1/20 0.42
PLA2G2A P14555 1/20 0.42
PPARG P37231 1/20 0.40
PPARD Q03181 1/20 0.40
PPARA Q07869 1/20 0.40
LMNA P02545 1/20 0.40
SMN1; SMN2 Q16637 1/20 0.40
NPC1 O15118 1/20 0.38
RAB9A P51151 1/20 0.38
SLC2A1 P11166 1/20 0.38

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL111973 0.96 ALDH1A1 (0.49) LTA4HALDH1A1TSHRSLC7A5MEN1
SCHEMBL683276 0.93 ACACB (0.43) LTA4HALDH1A1TSHRSLC7A5TDP1
SCHEMBL2758498 0.90 ALDH1A1 (0.46) ALDH1A1TSHRSLC7A5MEN1KMT2A
SCHEMBL682848 0.89 SLC7A5 (0.44) LTA4HALDH1A1TSHRSLC7A5MEN1
SCHEMBL14252125 0.87 ALDH1A1 (0.46) LTA4HALDH1A1TSHRSLC7A5MEN1
SCHEMBL13018293 0.86 ALDH1A1 (0.43) ALDH1A1TSHRSLC7A5MEN1KMT2A
SCHEMBL2758499 0.85 SLC7A5 (0.41) LTA4HALDH1A1TSHRSLC7A5MEN1
SCHEMBL682235 0.85 ALDH1A1 (0.48) ALDH1A1TSHRSLC7A5MEN1KMT2A
SCHEMBL18195484 0.84 ALDH1A1 (0.60) LTA4HALDH1A1TSHRSLC7A5MEN1
SCHEMBL14258895 0.84 ALDH1A1 (0.47) ALDH1A1TSHRSLC7A5MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 7 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-7344821-B2 Positive resist composition for use with electron beam, EUV light or X ray, and pattern formation method using the same FUJIFILM CORPORATION (JP) 2008-03-18 US disclosed
US-7326513-B2 Positive working resist composition FUJIFILM CORPORATION (JP) 2008-02-05 US disclosed
US-7250246-B2 Positive resist composition and pattern formation method using the same FUJIFILM CORPORATION (JP) 2007-07-31 US disclosed