SCHEMBL683373

SCHEMBL683373

Cc1cc(C(CCC2CCCCC2)OO)cc(C(CCC2CCCCC2)OO)c1

nearest known ligand 0.39

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NPC1 O15118 5/20 0.39
RAB9A P51151 3/20 0.39
MEN1 O00255 2/20 0.39
KMT2A Q03164 2/20 0.39
SMN1; SMN2 Q16637 2/20 0.39
TP53 P04637 1/20 0.39
TSHR P16473 1/20 0.39
GAA P10253 1/20 0.36
PKM P14618 1/20 0.36
HTT P42858 1/20 0.36
L3MBTL1 Q9Y468 2/20 0.36
METAP1 P53582 1/20 0.34
ALDH1A1 P00352 4/20 0.33
LMNA P02545 1/20 0.33
GPR84 Q9NQS5 1/20 0.33
TDP1 Q9NUW8 1/20 0.32
METAP2 P50579 1/20 0.32
DAO P14920 1/20 0.32
NR1I2 O75469 1/20 0.32
KDM4B O94953 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL16273459 0.83 L3MBTL1 (0.38) NPC1RAB9AMEN1KMT2ASMN1; SMN2
SCHEMBL10021099 0.67 KMT2A (0.43) NPC1RAB9AMEN1KMT2ASMN1; SMN2
SCHEMBL1520859 0.62 IDO1 (0.50) GAAL3MBTL1
SCHEMBL10525897 0.62 NPC1 (0.35) NPC1RAB9AMEN1KMT2ASMN1; SMN2
SCHEMBL13429375 0.61 METAP1 (0.47) MEN1KMT2AMETAP1METAP2
SCHEMBL7272902 0.61 METAP1 (0.47) MEN1KMT2AMETAP1METAP2
SCHEMBL6663470 0.61 METAP1 (0.47) MEN1KMT2AMETAP1METAP2
SCHEMBL1791563 0.61 METAP1 (0.47) MEN1KMT2AMETAP1METAP2
SCHEMBL14240897 0.60 METAP1 (0.43) METAP1ALDH1A1METAP2
SCHEMBL6570842 0.60 CYP2D6 (0.47) GAAPKML3MBTL1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 17 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9527809-B2 Compound, actinic ray-sensitive or radiation-sensitive resin composition, resist film, and pattern formation method, and method for manufacturing electronic device using same, and electronic device FUJIFILM CORPORATION (JP) 2016-12-27 US disclosed
US-9417528-B2 Pattern forming method, multi-layered resist pattern, multi-layered film for organic solvent development, resist composition, method for manufacturing electronic device, and electronic device FUJIFILM CORPORATION (JP) 2016-08-16 US disclosed
US-20160024005-A1 COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2016-01-28 US disclosed
US-9244344-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and, resist film, pattern forming method, electronic device manufacturing method, and electronic device, each using the same FUJIFILM CORPORATION (JP) 2016-01-26 US disclosed
US-20150248056-A1 PATTERN FORMING METHOD, MULTI-LAYERED RESIST PATTERN, MULTI-LAYERED FILM FOR ORGANIC SOLVENT DEVELOPMENT, RESIST COMPOSITION, METHOD FOR MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2015-09-03 US disclosed
US-20150227049-A1 ORGANIC PROCESSING LIQUID FOR PATTERNING CHEMICAL AMPLIFICATION RESIST FILM, CONTAINER FOR ORGANIC PROCESSING LIQUID FOR PATTERNING CHEMICAL AMPLIFICATION RESIST FILM, AND PATTERN FORMING METHOD, METHOD OF MANUFACTURING ELECTRONIC DEVICE, AND ELECTRONIC DEVICE USING THE SAME FUJIFILM CORPORATION (JP) 2015-08-13 US disclosed
US-9090722-B2 Chemical amplification resist composition, and mold preparation method and resist film using the same FUJIFILM CORPORATION (JP) 2015-07-28 US disclosed
US-20150118628-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM, METHOD OF FORMING PATTERN, PROCESS FOR MANUFACTURING SEMICONDUCTOR DEVICE, AND SEMICONDUCTOR DEVICE FUJIFILM CORPORATION (JP) 2015-04-30 US disclosed
US-8846293-B2 Actinic ray-sensitive or radiation-sensitive resin composition, and actinic ray-sensitive or radiation-sensitive film and pattern forming method using the same composition FUJIFILM CORPORATION (JP) 2014-09-30 US disclosed
US-20130130178-A1 ACTINIC-RAY-OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING PATTERN THEREWITH FUJIFILM CORPORATION (JP) 2013-05-23 US disclosed
US-20130078434-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND, RESIST FILM, PATTERN FORMING METHOD, ELECTRONIC DEVICE MANUFACTURING METHOD, AND ELECTRONIC DEVICE, EACH USING THE SAME FUJIFILM CORPORATION (JP) 2013-03-28 US disclosed
US-20120322007-A1 PATTERN FORMING METHOD, CHEMICAL AMPLIFICATION RESIST COMPOSITION AND RESIST FILM FUJIFILM CORPORATION (JP) 2012-12-20 US disclosed
US-20120251948-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, AND ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE FILM AND PATTERN FORMING METHOD USING THE SAME COMPOSITION FUJIFILM CORPORATION (JP) 2012-10-04 US disclosed
US-20120219910-A1 PHOTOSENSITIVE COMPOSITION AND PATTERN FORMING METHOD USING SAME FUJIFILM CORPORATION (JP) 2012-08-30 US disclosed
US-20120171618-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME FUJIFILM CORPORATION (JP) 2012-07-05 US disclosed
US-20120006788-A1 CHEMICAL AMPLIFICATION RESIST COMPOSITION, AND MOLD PREPARATION METHOD AND RESIST FILM USING THE SAME FUJIFILM CORPORATION (JP) 2012-01-12 US disclosed
US-20110027716-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION FUJIFILM CORPORATION (JP) 2011-02-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20160024005-A1 COMPOUND, ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, AND PATTERN FORMATION METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE USING SAME, AND ELECTRONIC DEVICE RER1, RAD51, TERB1 NPC1 3647/4885RAB9A 251/4885MEN1 1138/4885
US-20110027716-A1 ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, COMPOUND AND METHOD OF FORMING PATTERN USING THE COMPOSITION RER1, RXRA, XRN2 NPC1 3920/4885RAB9A 1267/4885MEN1 2938/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.