Known targets — ChEMBL curated mechanism
GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQ
The experimentally established mechanism targets of Water. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 6/20 | 0.38 |
| ▸ | TDP1 | Q9NUW8 | 5/20 | 0.35 |
| ▸ | CA2 | P00918 | 3/20 | 0.35 |
| ▸ | HSD17B10 | Q99714 | 3/20 | 0.35 |
| ▸ | ALOX15 | P16050 | 3/20 | 0.35 |
| ▸ | CA12 | O43570 | 2/20 | 0.35 |
| ▸ | LMNA | P02545 | 2/20 | 0.35 |
| ▸ | CA3 | P07451 | 2/20 | 0.35 |
| ▸ | CA4 | P22748 | 2/20 | 0.35 |
| ▸ | CA14 | Q9ULX7 | 2/20 | 0.35 |
| ▸ | CYP3A4 | P08684 | 2/20 | 0.35 |
| ▸ | MAPT | P10636 | 2/20 | 0.35 |
| ▸ | HPGD | P15428 | 2/20 | 0.35 |
| ▸ | SMN1; SMN2 | Q16637 | 2/20 | 0.35 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.35 |
| ▸ | NPC1 | O15118 | 1/20 | 0.35 |
| ▸ | GMNN | O75496 | 1/20 | 0.35 |
| ▸ | EGFR | P00533 | 1/20 | 0.35 |
| ▸ | FYN | P06241 | 1/20 | 0.35 |
| ▸ | POLB | P06746 | 1/20 | 0.35 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL29526094 | 0.96 | ALDH1A1 (0.40) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Bromide SCHEMBL2466692 | 0.92 | ALDH1A1 (0.38) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Iodide SCHEMBL5138232 | 0.92 | ALDH1A1 (0.38) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Fluoride Ion SCHEMBL2463417 | 0.92 | ALDH1A1 (0.39) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Hydrochloric Acid SCHEMBL63255 | 0.92 | ALDH1A1 (0.38) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Arsenic SCHEMBL27727223 | 0.89 | ALDH1A1 (0.35) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Water SCHEMBL3469001 | 0.89 | ALDH1A1 (0.35) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Phosphine SCHEMBL27580026 | 0.89 | ALDH1A1 (0.35) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Hydrochloric Acid SCHEMBL27867489 | 0.89 | ALDH1A1 (0.35) | ALDH1A1TDP1CA2HSD17B10ALOX15 | |
| Hydrochloric Acid SCHEMBL10391734 | 0.89 | ALDH1A1 (0.35) | ALDH1A1TDP1CA2HSD17B10ALOX15 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11462408-B2 | Method of forming an integrated circuit using a patterned mask layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-04 | — | — | US | claimed |
| US-20200312663-A1 | Method of Forming an Integrated Circuit | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-10-01 | — | — | US | claimed |
| US-8772183-B2 | Method of forming an integrated circuit | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2014-07-08 | — | — | US | claimed |
| US-20130102136-A1 | METHOD OF FORMING AN INTEGRATED CIRCUIT | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2013-04-25 | — | — | US | claimed |
| US-6599840-B2 | Material removal method for forming a structure | MICRON TECHNOLOGY, INC. | 2003-07-29 | — | — | US | claimed |
| US-6596648-B2 | Material removal method for forming a structure | MICRON TECHNOLOGY, INC. | 2003-07-22 | — | — | US | claimed |
| US-20020187648-A1 | Material removal method for forming a structure | MICRON TECHNOLOGY, INC. | 2002-12-12 | — | — | US | claimed |
| US-20020182872-A1 | Material removal method for forming a structure | MICRON TECHNOLOGY, INC. | 2002-12-05 | — | — | US | claimed |
| US-6261964-B1 | Material removal method for forming a structure | MICRON TECHNOLOGY, INC. | 2001-07-17 | — | — | US | claimed |
| US-5019425-A | Process for the pre-treatment of synthetic materials | SCHERING AKTIENGESELLSCHAFT (DE) | 1991-05-28 | — | — | US | claimed |
| US-12027370-B2 | Method of forming an integrated circuit using a patterned mask layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2024-07-02 | — | — | US | disclosed |
| US-20220375752-A1 | Method Of Forming An Integrated Circuit Priority Claim | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-11-24 | — | — | US | disclosed |
| US-11462408-B2 | Method of forming an integrated circuit using a patterned mask layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2022-10-04 | — | — | US | disclosed |
| US-20200312663-A1 | Method of Forming an Integrated Circuit | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-10-01 | — | — | US | disclosed |
| US-10665457-B2 | Method of forming an integrated circuit using a patterned mask layer | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (TW) | 2020-05-26 | — | — | US | disclosed |
| US-6261964-B1 | Material removal method for forming a structure | MICRON TECHNOLOGY, INC. | 2001-07-17 | — | — | US | disclosed |
| EP-0987272-A1 | Process for the manufacturing of polyguluronic acids | SEIKO EPSON CORPORATION (JP) | 2000-03-22 | — | — | EP | disclosed |
| US-5019425-A | Process for the pre-treatment of synthetic materials | SCHERING AKTIENGESELLSCHAFT (DE) | 1991-05-28 | — | — | US | disclosed |
| EP-0380767-A2 | Process for the adherent metallisation of highly temperature-stable plastics | SCHERING AKTIENGESELLSCHAFT (DE) | 1990-08-08 | — | — | EP | disclosed |
| EP-0317748-A2 | Pre-treatment process for synthetic resins | SCHERING AKTIENGESELLSCHAFT (DE) | 1989-05-31 | — | — | EP | disclosed |