SCHEMBL685318

SCHEMBL685318

Fc1ccc([S+](c2ccccc2)c2ccc(F)cc2)cc1

nearest known ligand 0.44

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
NFE2L2 Q16236 2/20 0.44
CA1 P00915 1/20 0.35
CA2 P00918 1/20 0.35
CA7 P43166 1/20 0.35
CA9 Q16790 1/20 0.35
ACHE P22303 1/20 0.35
CYP1A2 P05177 1/20 0.35
CYP2A6 P11509 1/20 0.35
ALDH1A1 P00352 2/20 0.34
MAPT P10636 2/20 0.34
KCNN4 O15554 2/20 0.34
ALOX15 P16050 1/20 0.34
TSHR P16473 1/20 0.34
RECQL P46063 1/20 0.34
NPC1 O15118 1/20 0.34
RAB9A P51151 1/20 0.34
NOX1 Q9Y5S8 1/20 0.34
PLA2G1B P04054 1/20 0.33
ATG4B Q9Y4P1 1/20 0.33
PKM P14618 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL686199 1.00 NFE2L2 (0.44) NFE2L2CA1CA2CA7CA9
SCHEMBL11980109 1.00 NFE2L2 (0.44) NFE2L2CA1CA2CA7CA9
Hydrochloric Acid SCHEMBL31106430 0.97 NFE2L2 (0.42) NFE2L2CA1CA2CA7CA9
Bromide SCHEMBL3139600 0.97 NFE2L2 (0.42) NFE2L2CA1CA2CA7CA9
Bromide SCHEMBL3139897 0.97 NFE2L2 (0.42) NFE2L2CA1CA2CA7CA9
Hydrochloric Acid SCHEMBL1003477 0.97 NFE2L2 (0.42) NFE2L2CA1CA2CA7CA9
SCHEMBL30146934 0.93 NFE2L2 (0.39) NFE2L2CA1CA2CA7CA9
SCHEMBL3130517 0.93 NFE2L2 (0.39) NFE2L2CA1CA2CA7CA9
SCHEMBL29364757 0.93 NFE2L2 (0.39) NFE2L2CA1CA2CA7CA9
SCHEMBL3140033 0.93 NFE2L2 (0.39) NFE2L2CA1CA2CA7CA9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 305 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2455811-B1 Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method SHINETSU CHEMICAL CO (JP) 2016-01-13 EP claimed
EP-2455811-A1 Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method Shin-Etsu Chemical Co., Ltd. (JP) 2012-05-23 EP claimed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-11914294-B2 Positive resist composition and pattern forming process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-02-27 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027903-A1 Resist Material And Patterning Process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027909-A1 POSITIVE RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20240027902-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION AND PATTERNING PROCESS SHIN-ETSU CHEMICAL CO., LTD. (JP) 2024-01-25 US disclosed
US-20230400768-A1 RADIATION-SENSITIVE COMPOSITION AND METHOD OF FORMING RESIST PATTERN JSR CORPORATION (JP) 2023-12-14 US disclosed
US-11835857-B2 Resist composition and method of forming resist pattern TOKYO OHKA KOGYO CO., LTD. (JP) 2023-12-05 US disclosed
US-20090305161-A1 LIQUID IMMERSION LITHOGRAPHY JSR CORPORATION (JP) 2009-12-10 US disclosed
EP-2128706-A1 RESIST PATTERN FORMATION METHOD, AND RESIN COMPOSITION CAPABLE OF INSOLUBILIZING RESIST PATTERN JSR Corporation (JP) 2009-12-02 EP disclosed
US-7414148-B2 Process for producing alkoxycarbonylfluoroalkanesulfonates CENTRAL GLASS COMPANY LIMITED (JP) 2008-08-19 US disclosed
EP-1953595-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR Corporation (JP) 2008-08-06 EP disclosed
US-20080108846-A1 PROCESS FOR PRODUCING ALKOXYCARBONYLFLUOROALKANESULFONATES CENTRAL GLASS COMPANY, LIMITED (JP) 2008-05-08 US disclosed
EP-1676835-A1 PROCESS FOR PRODUCING TRIARYLSULFONIUM SALT Wako Pure Chemical Industries, Ltd. (JP) 2006-07-05 EP disclosed
EP-0375160-B1 Tethered sulfonium salt photoinitiators for free radical polymerization MINNESOTA MINING & MFG (US) 1995-03-08 EP disclosed
US-4954416-A PHOTOSENSITIZED COORDINATION COMPOUNDS; SYNERGISTIC; PHOTORESISTS; PROTECTIVE COATINGS; PRINTING PLATES; GRAPHIC ARTS MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1990-09-04 US disclosed
EP-0375160-A2 Tethered sulfonium salt photoinitiators for free radical polymerization MINNESOTA MINING AND MANUFACTURING COMPANY (US) 1990-06-27 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080108846-A1 PROCESS FOR PRODUCING ALKOXYCARBONYLFLUOROALKANESULFONATES ARSA, PFAS, MPST NFE2L2 2129/4885CA1 462/4885CA2 45/4885
US-20240027903-A1 Resist Material And Patterning Process LBR, HNRNPU, EWSR1 NFE2L2 2149/4885CA1 2206/4885CA2 1391/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.