Known targets — ChEMBL curated mechanism
ACHEBDKRB2CHRM1CHRM2CHRM3CHRNA1CHRNB1CHRNDCHRNECHRNGGUCY1A1GUCY1A2GUCY1B1GUCY1B2NAMPTPTAFRSLC10A2SLC6A2SLC6A3TACR1dacAdacBdacCftsImrcAmrcBmrdA
The experimentally established mechanism targets of Hydrochloric Acid. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ACHE known ✓ | P22303 | 1/20 | 0.33 |
| ▸ | NFE2L2 | Q16236 | 2/20 | 0.42 |
| ▸ | ALDH1A1 | P00352 | 2/20 | 0.33 |
| ▸ | MAPT | P10636 | 2/20 | 0.33 |
| ▸ | KCNN4 | O15554 | 2/20 | 0.33 |
| ▸ | ALOX15 | P16050 | 1/20 | 0.33 |
| ▸ | TSHR | P16473 | 1/20 | 0.33 |
| ▸ | RECQL | P46063 | 1/20 | 0.33 |
| ▸ | CA1 | P00915 | 1/20 | 0.33 |
| ▸ | CA2 | P00918 | 1/20 | 0.33 |
| ▸ | CA7 | P43166 | 1/20 | 0.33 |
| ▸ | CA9 | Q16790 | 1/20 | 0.33 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | CYP2A6 | P11509 | 1/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | NOX1 | Q9Y5S8 | 1/20 | 0.33 |
| ▸ | PLA2G1B | P04054 | 1/20 | 0.32 |
| ▸ | ATG4B | Q9Y4P1 | 1/20 | 0.32 |
| ▸ | MAPK10 | P53779 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| Hydrochloric Acid SCHEMBL31106430 | 1.00 | NFE2L2 (0.42) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| SCHEMBL686199 | 0.97 | NFE2L2 (0.44) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| SCHEMBL11980109 | 0.97 | NFE2L2 (0.44) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| SCHEMBL685318 | 0.97 | NFE2L2 (0.44) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| Bromide SCHEMBL3139897 | 0.95 | NFE2L2 (0.42) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| Bromide SCHEMBL3139600 | 0.95 | NFE2L2 (0.42) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| SCHEMBL30146934 | 0.90 | NFE2L2 (0.39) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| SCHEMBL3130517 | 0.90 | NFE2L2 (0.39) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| SCHEMBL29364757 | 0.90 | NFE2L2 (0.39) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 | |
| SCHEMBL3140033 | 0.90 | NFE2L2 (0.39) | NFE2L2ALDH1A1MAPTKCNN4ALOX15 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 11 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-119264025-A | Preparation method of photoacid generator for semiconductor photoresist | 苏州威迈芯材半导体有限公司 | 2025-01-07 | — | — | CN | disclosed |
| EP-2455811-B1 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHINETSU CHEMICAL CO (JP) | 2016-01-13 | — | — | EP | disclosed |
| US-9233919-B2 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2016-01-12 | — | — | US | disclosed |
| US-9221742-B2 | Sulfonium salt, chemically amplified resist composition, and pattern forming process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-12-29 | — | — | US | disclosed |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2015-03-26 | — | — | US | disclosed |
| US-20140296561-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | SHINETSU CHEMICAL CO (JP) | 2014-10-02 | — | — | US | disclosed |
| US-8785105-B2 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2014-07-22 | — | — | US | disclosed |
| US-20120129103-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-24 | — | — | US | disclosed |
| EP-2455811-A1 | Sulfonium salt-containing polymer, resist composition, patterning process, and sulfonium salt monomer and making method | Shin-Etsu Chemical Co., Ltd. (JP) | 2012-05-23 | — | — | EP | disclosed |
| US-8173354-B2 | Sulfonium salt, resist composition, and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2012-05-08 | — | — | US | disclosed |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2011-01-13 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (4 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20140296561-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | RER1, SMC4, SMCHD1 | ACHE 4825/4885NFE2L2 4816/4885ALDH1A1 2467/4885 |
| US-20150086926-A1 | SULFONIUM SALT, CHEMICALLY AMPLIFIED RESIST COMPOSITION, AND PATTERN FORMING PROCESS | CA2, CASR, CECR2 | ACHE 4531/4885NFE2L2 2162/4885ALDH1A1 4260/4885 |
| US-20120129103-A1 | SULFONIUM SALT-CONTAINING POLYMER, RESIST COMPOSITION, PATTERNING PROCESS, AND SULFONIUM SALT MONOMER AND MAKING METHOD | RER1, SMC4, SMCHD1 | ACHE 4825/4885NFE2L2 4816/4885ALDH1A1 2467/4885 |
| US-20110008735-A1 | SULFONIUM SALT, RESIST COMPOSITION, AND PATTERNING PROCESS | ETV6, ETV1, VPS4B | ACHE 4719/4885NFE2L2 4291/4885ALDH1A1 4625/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.