SCHEMBL685844

SCHEMBL685844

C=Cc1ccc(OC(C)OCCC2CCCCC2)cc1

nearest known ligand 0.41

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
NFE2L2 Q16236 1/20 0.40
HPGD P15428 13/20 0.39
PTGES O14684 1/20 0.36
CHRNB2 P17787 1/20 0.34
CHRNB4 P30926 1/20 0.34
CHRNA3 P32297 1/20 0.34
CHRNA7 P36544 1/20 0.34
CHRNA4 P43681 1/20 0.34
KDM4E B2RXH2 1/20 0.34
ALDH1A1 P00352 1/20 0.34
MAOB P27338 1/20 0.34
HRH3 Q9Y5N1 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL15759688 1.00 NFE2L2 (0.40) NFE2L2HPGDPTGESCHRNB2CHRNB4
SCHEMBL5702518 0.86 HPGD (0.37) HPGDCHRNB2CHRNB4CHRNA3CHRNA7
SCHEMBL1356712 0.86 TLR4 (0.37) NFE2L2HPGDALDH1A1
SCHEMBL18125567 0.85 HPGD (0.36) HPGDCHRNB2CHRNB4CHRNA3CHRNA7
SCHEMBL2631350 0.82 NFE2L2 (0.47) NFE2L2KDM4EALDH1A1HRH3
Ethylene SCHEMBL27857485 0.82 NFE2L2 (0.40) NFE2L2CHRNB4CHRNA3ALDH1A1
SCHEMBL3837476 0.82 NFKB1 (0.41) NFE2L2HPGDCHRNB2CHRNB4CHRNA3
SCHEMBL13900747 0.81 NFE2L2 (0.42) NFE2L2HPGDKDM4EALDH1A1HRH3
SCHEMBL686105 0.81 NFE2L2 (0.40) NFE2L2HPGDKDM4EALDH1A1HRH3
SCHEMBL18746023 0.80 NFE2L2 (0.41) NFE2L2HPGDKDM4EALDH1A1HRH3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 450 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240027908-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-01-25 US disclosed
US-20240027908-A1 ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION, RESIST FILM, PATTERN FORMING METHOD, AND METHOD FOR MANUFACTURING ELECTRONIC DEVICE FUJIFILM CORPORATION (JP) 2024-01-25 US disclosed
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
US-11640113-B2 Actinic ray-sensitive or radiation-sensitive resin composition, pattern forming method, and method of manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-05-02 US disclosed
CN-115437214-A Chemically amplified positive photosensitive resin composition, protective film, and element having protective film 奇美实业股份有限公司 2022-12-06 CN disclosed
CN-113126435-A Chemically amplified positive photosensitive resin composition and use thereof 奇美实业股份有限公司 2021-07-16 CN disclosed
US-10969685-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2021-04-06 US disclosed
CN-112394618-A Chemically amplified positive photosensitive resin composition, and protective film and member produced therefrom 奇美实业股份有限公司 2021-02-23 CN disclosed
EP-3229075-B1 PHOTORESIST COMPOSITION, METHOD FOR MANUFACTURING SAME, AND METHOD FOR FORMING RESIST PATTERN JSR CORP (JP) 2021-01-06 EP disclosed
CN-111999980-A Chemically amplified positive photosensitive resin composition, protective film and module 奇美实业股份有限公司 2020-11-27 CN disclosed
US-20020102491-A1 Comprising iodinium or sulfonium salt capable of generating a specified sulfonic acid upon irradiation and an acid decomposable resin (such as polyhydroxystyrene) FUJI PHOTO FILM CO., LTD. 2002-08-01 US disclosed
EP-1199603-A9 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2002-07-31 EP disclosed
US-20020058200-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2002-05-16 US disclosed
EP-1199603-A1 Positive photosensitive composition FUJI PHOTO FILM CO., LTD. (JP) 2002-04-24 EP disclosed
US-20020006578-A1 Positive resist composition FUJI PHOTO FILM CO., LTD. 2002-01-17 US disclosed
US-20010055726-A1 Positive radiation-sensitive composition FUJI PHOTO FILM CO., LTD. 2001-12-27 US disclosed
EP-1158363-A1 Positive resist composition and onium salts of saccharin derivatives FUJI PHOTO FILM CO., LTD. (JP) 2001-11-28 EP disclosed
US-20010041300-A1 Positive photoresist composition FUJIFILM CORPORATION (JP) 2001-11-15 US disclosed
US-20010033993-A1 Positive-working radiation-sensitive composition FUJIFILM CORPORATION (JP) 2001-10-25 US disclosed
EP-1059563-A1 Agent for reducing substrate dependence of resist Wako Pure Chemical Industries, Ltd. (JP) 2000-12-13 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20020102491-A1 Comprising iodinium or sulfonium salt capable of generating a specified sulfonic acid upon irradiation and an acid decomposable resin (such as polyhydroxystyrene) RARA, ARSA, RARB NFE2L2 3590/4885HPGD 1619/4885PTGES 3245/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.