SCHEMBL2631350

SCHEMBL2631350

CC(OCCC1CCCCC1)Oc1ccc(C(C)C)cc1

nearest known ligand 0.47

Predicted protein targets (top 17)

geneUniProtsupporting neighboursconfidence
NFE2L2 Q16236 1/20 0.47
KMT2A Q03164 4/20 0.39
EPHX1 P07099 1/20 0.39
EPHX2 P34913 1/20 0.39
MEN1 O00255 3/20 0.38
L3MBTL1 Q9Y468 1/20 0.36
MITF O75030 1/20 0.36
NPSR1 Q6W5P4 1/20 0.36
KDM4E B2RXH2 1/20 0.36
ALDH1A1 P00352 1/20 0.36
FFAR1 O14842 1/20 0.36
CNR2 P34972 1/20 0.36
PPARG P37231 1/20 0.35
PPARD Q03181 1/20 0.35
PPARA Q07869 1/20 0.35
SMN1; SMN2 Q16637 1/20 0.35
HRH3 Q9Y5N1 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL13359778 0.89 NFE2L2 (0.41) NFE2L2KMT2AMEN1MITFKDM4E
SCHEMBL18746023 0.89 NFE2L2 (0.41) NFE2L2KMT2AMEN1MITFKDM4E
SCHEMBL26158132 0.88 NFE2L2 (0.40) NFE2L2KMT2AMEN1MITFKDM4E
SCHEMBL111625 0.88 ALDH1A1 (0.42) NFE2L2KMT2AMEN1MITFNPSR1
SCHEMBL14049134 0.88 ALDH1A1 (0.42) NFE2L2KMT2AMEN1MITFNPSR1
SCHEMBL25504988 0.87 NFE2L2 (0.40) NFE2L2KMT2AMEN1MITFKDM4E
SCHEMBL683300 0.86 ALDH1A1 (0.43) NFE2L2KMT2AMEN1NPSR1KDM4E
SCHEMBL16000957 0.85 NFE2L2 (0.39) NFE2L2KMT2AMEN1MITFKDM4E
SCHEMBL13900747 0.84 NFE2L2 (0.42) NFE2L2KDM4EALDH1A1PPARGHRH3
SCHEMBL15436227 0.84 NFE2L2 (0.38) NFE2L2KMT2AMEN1MITFKDM4E

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20200363720-A1 SALT, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2020-11-19 US disclosed
US-20170329219-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-11-16 US disclosed
US-20170329224-A1 PROCESS FOR PRODUCING PHOTORESIST PATTERN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-11-16 US disclosed
US-8158326-B2 Photosensitive composition, compound for use in the photosensitive composition, and method of pattern formation with the photosensitive composition FUJIFILM CORPORATION (JP) 2012-04-17 US disclosed
US-8124310-B2 Positive resist composition and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-02-28 US disclosed
US-8092978-B2 Positive resist composition for electron beam, X-ray or EUV and pattern forming method using the same FUJIFILM CORPORATION (JP) 2012-01-10 US disclosed
US-20090246685-A1 POSITIVE RESIST COMPOSITION FOR ELECTRON BEAM, X-RAY OR EUV AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-10-01 US disclosed
US-20090087784-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2009-04-02 US disclosed
US-20090075202-A1 PHOTOSENSITIVE COMPOSITION, COMPOUND FOR USE IN THE PHOTOSENSITIVE COMPOSITION, AND METHOD OF PATTERN FORMATION WITH THE PHOTOSENSITIVE COMPOSITION FUJIFILM CORPORATION (JP) 2009-03-19 US disclosed
US-20080096134-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-24 US disclosed
US-20080096134-A1 POSITIVE RESIST COMPOSITION AND PATTERN FORMING METHOD USING THE SAME FUJIFILM CORPORATION (JP) 2008-04-24 US disclosed
EP-1835341-A1 Positive resist composition and pattern forming method using the same FUJIFILM Corporation (JP) 2007-09-19 EP disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20200363720-A1 SALT, QUENCHER, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN REN, SLC11A2, NHERF1 NFE2L2 3599/4885KMT2A 2908/4885EPHX1 3868/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.