SCHEMBL685969

SCHEMBL685969

C=C(C)C(=O)OC1C2CC3C1OC(=O)C3C2C

nearest known ligand 0.33

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.33
NPC1 O15118 1/20 0.33
POLB P06746 1/20 0.33
MAPT P10636 1/20 0.33
PKM P14618 1/20 0.33
HTT P42858 1/20 0.33
RECQL P46063 1/20 0.33
RAB9A P51151 1/20 0.33
ATM Q13315 1/20 0.33
TDP1 Q9NUW8 1/20 0.33
GPX4 P36969 1/20 0.31
KMT2A Q03164 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19954374 1.00 KDM4E (0.33) KDM4ENPC1POLBMAPTPKM
SCHEMBL18270550 0.90 KDM4E (0.34) KDM4ENPC1POLBMAPTPKM
SCHEMBL685683 0.87 ALDH1A1 (0.33)
SCHEMBL10204631 0.86 KDM4E (0.35) KDM4ENPC1POLBMAPTPKM
SCHEMBL13425003 0.86 TAS2R46 (0.35) NPC1MAPTHTTRAB9A
SCHEMBL13638263 0.86
SCHEMBL1216158 0.85 KDM4E (0.32) KDM4ENPC1POLBMAPTPKM
SCHEMBL1218941 0.85 KDM4E (0.32) KDM4ENPC1POLBMAPTPKM
SCHEMBL14489074 0.85 ALDH1A1 (0.32)
SCHEMBL6103191 0.85

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 345 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-10377692-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2019-08-13 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9927708-B2 Pattern forming process and shrink agent SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-27 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9910358-B2 Patterning process and chemically amplified negative resist composition SHIN-ETSU CHEMICAL CO., LTD. (JP) 2018-03-06 US disclosed
US-9862695-B2 Monomer having N-acyl carbamoyl group and lactone skeleton, and polymeric compound DAICEL CORPORATION (JP) 2018-01-09 US disclosed
US-9760010-B2 Patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-09-12 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9709890-B2 Resist composition and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2017-07-18 US disclosed
US-20070111140-A1 Resist composition and patterning process using the same SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-05-17 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed
US-20070072115-A1 Positive resist compositions and patterning process SHIN-ETSU CHEMICAL CO., LTD. (JP) 2007-03-29 US disclosed
US-20060281022-A1 Polymeric compound containing a repeated unit having a 2-oxatricyclo [4.2.1.0 4.8] nonan-3-one ring and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-12-14 US disclosed
US-20060160247-A1 Unsaturated carboxylic acid hemicacetal ester, polymeric compound and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-07-20 US disclosed
EP-1681307-A1 POLYMERIC COMPOUND CONTAINING REPEATING UNIT HAVING 2-OXATRICYCLO[4.2.1.04,8]NONAN-3-ONE RING, AND PHOTORESIST RESIN COMPOSITION Daicel Chemical Industries, Ltd. (JP) 2006-07-19 EP disclosed
US-7033726-B2 Photoresist polymeric compound and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2006-04-25 US disclosed
US-20060046190-A1 Positive resist composition and pattern forming method utilizing the same FUJI PHOTO FILM CO., LTD. 2006-03-02 US disclosed
EP-1630607-A2 Positive resist composition and pattern forming method utilizing the same FUJI PHOTO FILM CO., LTD. (JP) 2006-03-01 EP disclosed
US-20050014087-A1 Photoresist polymeric compound and photoresist resin composition DAICEL CHEMICAL INDUSTRIES, LTD. (JP) 2005-01-20 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (2 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20060160247-A1 Unsaturated carboxylic acid hemicacetal ester, polymeric compound and photoresist resin composition HCAR1, HCAR2, RARA KDM4E 3157/4885NPC1 4727/4885POLB 3935/4885
US-10377692-B2 Photoresist composition C1R, C1S, F12 KDM4E 4299/4885NPC1 3833/4885POLB 2261/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.