Predicted protein targets (top 1)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL19215192 | 0.90 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL92254 | 0.90 | ALDH1A1 (0.33) | ALDH1A1 | |
| SCHEMBL11964236 | 0.89 | ALDH1A1 (0.30) | ALDH1A1 | |
| SCHEMBL960982 | 0.89 | KMT2A (0.33) | ALDH1A1 | |
| SCHEMBL12130170 | 0.88 | POLB (0.33) | — | |
| SCHEMBL17552585 | 0.88 | — | — | |
| SCHEMBL501880 | 0.87 | GPX4 (0.32) | — | |
| SCHEMBL12130185 | 0.87 | POLB (0.35) | — | |
| SCHEMBL963867 | 0.87 | — | — | |
| SCHEMBL685683 | 0.87 | ALDH1A1 (0.33) | ALDH1A1 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 212 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11774853-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-11774853-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2023-10-03 | — | — | US | disclosed |
| US-20200241414-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-07-30 | — | — | US | disclosed |
| US-20200192222-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2020-06-18 | — | — | US | disclosed |
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-10222696-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2019-03-05 | — | — | US | disclosed |
| US-10023752-B2 | Conductive material and substrate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-07-17 | — | — | US | disclosed |
| US-10023752-B2 | Conductive material and substrate | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-07-17 | — | — | US | disclosed |
| US-9958776-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-9958776-B2 | Resist composition and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2018-05-01 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
| US-20070218401-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-09-20 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20200241414-A1 | RESIST COMPOSITION AND PATTERNING PROCESS | INSR, HNRNPU, HNRNPR | ALDH1A1 4836/4885 |
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | ALDH1A1 2217/4885 |
| US-10222696-B2 | Resist composition and patterning process | SLC11A2, GRN, PGF | ALDH1A1 4832/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.