SCHEMBL686205

SCHEMBL686205

CC(F)(F)C(=O)OC12CC3CC(CC(C3)C1)C2

nearest known ligand 0.48

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
CYP19A1 P11511 4/20 0.48
CYP17A1 P05093 3/20 0.48
NAAA Q02083 1/20 0.39
NPSR1 Q6W5P4 3/20 0.38
MEN1 O00255 2/20 0.35
KMT2A Q03164 2/20 0.35
ALDH1A1 P00352 2/20 0.35
HTT P42858 2/20 0.35
MAPK1 P28482 1/20 0.35
TSHR P16473 1/20 0.35
EPHX2 P34913 1/20 0.34
LMNA P02545 1/20 0.33
GLA P06280 1/20 0.33
CA2 P00918 1/20 0.33
CACNA1H O95180 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL686054 0.87 CYP19A1 (0.39) CYP19A1CYP17A1NAAANPSR1TSHR
SCHEMBL685366 0.85 TSHR (0.53) CYP19A1CYP17A1NAAANPSR1TSHR
SCHEMBL18648367 0.85 CYP19A1 (0.46) CYP19A1CYP17A1NAAANPSR1MEN1
SCHEMBL12412381 0.84 CYP19A1 (0.40) CYP19A1CYP17A1NAAANPSR1TSHR
SCHEMBL14701765 0.84 CYP19A1 (0.40) CYP19A1CYP17A1NAAANPSR1MEN1
SCHEMBL14701762 0.84 CYP19A1 (0.40) CYP19A1CYP17A1NAAANPSR1MEN1
SCHEMBL9764361 0.84 CYP19A1 (0.43) CYP19A1CYP17A1NAAANPSR1MEN1
SCHEMBL13232360 0.84 CYP19A1 (0.50) CYP19A1CYP17A1NAAANPSR1MEN1
SCHEMBL685859 0.83 CYP19A1 (0.41) CYP19A1CYP17A1NAAANPSR1MEN1
SCHEMBL776275 0.83 CYP17A1 (0.36) CYP19A1CYP17A1NPSR1ALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 95 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-12032290-B2 Actinic ray-sensitive or radiation-sensitive resin composition, resist film, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2024-07-09 US disclosed
US-11740555-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-08-29 US disclosed
US-11703758-B2 Photosensitive composition for EUV light, pattern forming method, and method for manufacturing electronic device FUJIFILM CORPORATION (JP) 2023-07-18 US disclosed
US-11687003-B2 Negative resist pattern-forming method, and composition for upper layer film formation JSR CORPORATION (JP) 2023-06-27 US disclosed
US-20230161244-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2023-05-25 US disclosed
WO-2020246143-A1 RADIATION-SENSITIVE RESIN COMPOSITION, RESIST PATTERN FORMATION METHOD, AND COMPOUND JSR株式会社 2020-12-10 WO disclosed
EP-3605228-A1 RADIATION SENSITIVE COMPOSITION AND RESIST PATTERN FORMING METHOD JSR Corporation (JP) 2020-02-05 EP disclosed
US-20180031969-A1 COMPOUND, RESIN AND PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2018-02-01 US disclosed
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9638997-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-05-02 US disclosed
US-20110053082-A1 RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-03-03 US disclosed
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN SUMITOMO CHEMICAL COMPANY,LIMITED (JP) 2011-03-03 US disclosed
US-20110039208-A1 PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-17 US disclosed
US-20110033804-A1 PHOTORESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-02-10 US disclosed
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2011-01-20 US disclosed
US-20100330497-A1 CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-30 US disclosed
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2010-12-02 US disclosed
US-20080081925-A1 Sulfonium compound SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-04-03 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (8 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080081925-A1 Sulfonium compound SLCO2A1, AFF2, SLCO2B1 CYP19A1 113/4885CYP17A1 764/4885NAAA 2821/4885
US-20100304296-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME C1S, H1-0, H1-2 CYP19A1 2654/4885CYP17A1 2107/4885NAAA 3886/4885
US-11740555-B2 Resist composition and method for producing resist pattern RER1, GAR1, REV1 CYP19A1 1306/4885CYP17A1 1449/4885NAAA 580/4885
US-20110014567-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, XPOT, ERCC4 CYP19A1 2872/4885CYP17A1 2160/4885NAAA 4455/4885
US-20110014566-A1 SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME XPA, NPPA, ERCC4 CYP19A1 1365/4885CYP17A1 1953/4885NAAA 799/4885
US-20110053086-A1 COMPOUND, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN OR10J3, C1R, C9 CYP19A1 1806/4885CYP17A1 1477/4885NAAA 3243/4885
US-20230161244-A1 CARBOXYLATE, CARBOXYLIC ACID GENERATOR, RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN GAR1, RER1, RIMKLA CYP19A1 2258/4885CYP17A1 1857/4885NAAA 159/4885
US-20110039209-A1 COMPOUND AND PHOTORESIST COMPOSITION CONTAINING THE SAME RCOR3, RCN1, HRH4 CYP19A1 1414/4885CYP17A1 2440/4885NAAA 2895/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.