Predicted protein targets (top 12)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.33 |
| ▸ | NPC1 | O15118 | 1/20 | 0.33 |
| ▸ | POLB | P06746 | 1/20 | 0.33 |
| ▸ | MAPT | P10636 | 1/20 | 0.33 |
| ▸ | PKM | P14618 | 1/20 | 0.33 |
| ▸ | HTT | P42858 | 1/20 | 0.33 |
| ▸ | RECQL | P46063 | 1/20 | 0.33 |
| ▸ | RAB9A | P51151 | 1/20 | 0.33 |
| ▸ | ATM | Q13315 | 1/20 | 0.33 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.33 |
| ▸ | GPX4 | P36969 | 1/20 | 0.32 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL23417140 | 0.88 | SMN1; SMN2 (0.30) | SMN1; SMN2 | |
| SCHEMBL686553 | 0.86 | ALDH1A1 (0.33) | — | |
| SCHEMBL10231851 | 0.84 | KDM4E (0.34) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL786728 | 0.84 | KDM4E (0.34) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL10294013 | 0.83 | KDM4E (0.35) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL448688 | 0.82 | KDM4E (0.33) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL328506 | 0.82 | KDM4E (0.31) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL25918349 | 0.81 | — | — | |
| SCHEMBL1704883 | 0.81 | SMN1; SMN2 (0.31) | SMN1; SMN2 | |
| SCHEMBL12170326 | 0.80 | KDM4E (0.37) | KDM4ENPC1POLBMAPTPKM |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 52 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20240241441-A1 | POLYMER, PHOTORESIST COMPOSITIONS INCLUDING THE SAME, AND PATTERN FORMATION METHODS | U.S. BANK TRUST COMPANY, NATIONAL ASSOCIATION, AS NOTES COLLATERAL AGENT | 2024-07-18 | — | — | US | disclosed |
| US-11914300-B2 | Manufacturing method of semiconductor chip, and kit | FUJIFILM CORPORATION (JP) | 2024-02-27 | — | — | US | disclosed |
| US-20230333478-A1 | PATTERN FORMING METHOD, METHOD FOR PRODUCING ELECTRONIC DEVICE, AND KIT | FUJIFILM CORPORATION (JP) | 2023-10-19 | — | — | US | disclosed |
| US-11733611-B2 | Pattern forming method, method for producing electronic device, and kit | FUJIFILM CORPORATION (JP) | 2023-08-22 | — | — | US | disclosed |
| US-20220171286-A1 | RESIST COMPOSITION AND METHOD OF FORMING RESIST PATTERN | NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) | 2022-06-02 | — | — | US | disclosed |
| US-11042094-B2 | Treatment liquid and pattern forming method | FUJIFILM CORPORATION (JP) | 2021-06-22 | — | — | US | disclosed |
| US-20210157241-A1 | MANUFACTURING METHOD OF SEMICONDUCTOR CHIP, AND KIT | FUJIFILM CORPORATION (JP) | 2021-05-27 | — | — | US | disclosed |
| US-10962884-B2 | Treatment liquid and pattern forming method | FUJIFILM CORPORATION (JP) | 2021-03-30 | — | — | US | disclosed |
| US-10942455-B2 | Manufacturing method of semiconductor chip, and kit | FUJIFILM CORPORATION (JP) | 2021-03-09 | — | — | US | disclosed |
| US-20190276575-A1 | METHOD FOR PRODUCING RESIN AND METHOD FOR PRODUCING ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE COMPOSITION | FUJIFILM CORPORATION (JP) | 2019-09-12 | — | — | US | disclosed |
| US-20100330497-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-30 | — | — | US | disclosed |
| US-20100203446-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-08-12 | — | — | US | disclosed |
| US-20100075257-A1 | Resin and Chemically Amplified Resist Composition Comprising the Same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-03-25 | — | — | US | disclosed |
| US-20100062365-A1 | CHEMICALLY AMPLIFIED POSITIVE RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-03-11 | — | — | US | disclosed |
| US-20090264565-A1 | POLYMER AND CHEMICALLY AMPLIFIED RESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-20090263742-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-7575850-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-18 | — | — | US | disclosed |
| US-7572570-B2 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-08-11 | — | — | US | disclosed |
| US-20080274426-A1 | Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-11-06 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |