Predicted protein targets (top 11)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.34 |
| ▸ | NPC1 | O15118 | 1/20 | 0.34 |
| ▸ | POLB | P06746 | 1/20 | 0.34 |
| ▸ | MAPT | P10636 | 1/20 | 0.34 |
| ▸ | PKM | P14618 | 1/20 | 0.34 |
| ▸ | HTT | P42858 | 1/20 | 0.34 |
| ▸ | RECQL | P46063 | 1/20 | 0.34 |
| ▸ | RAB9A | P51151 | 1/20 | 0.34 |
| ▸ | ATM | Q13315 | 1/20 | 0.34 |
| ▸ | TDP1 | Q9NUW8 | 1/20 | 0.34 |
| ▸ | GPX4 | P36969 | 1/20 | 0.33 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL10231851 | 0.90 | KDM4E (0.34) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL786553 | 0.87 | ALDH1A1 (0.32) | — | |
| SCHEMBL10294013 | 0.86 | KDM4E (0.35) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL686464 | 0.84 | KDM4E (0.33) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL10230925 | 0.81 | KDM4E (0.32) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL10236357 | 0.81 | KDM4E (0.32) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL448688 | 0.80 | KDM4E (0.33) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL10135165 | 0.80 | — | — | |
| SCHEMBL10294009 | 0.80 | KDM4E (0.32) | KDM4ENPC1POLBMAPTPKM | |
| SCHEMBL328506 | 0.80 | KDM4E (0.31) | KDM4ENPC1POLBMAPTPKM |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 21 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-8304164-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-11-06 | — | — | US | disclosed |
| US-20120171618-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION AND METHOD OF FORMING A PATTERN USING THE SAME | FUJIFILM CORPORATION (JP) | 2012-07-05 | — | — | US | disclosed |
| US-20120088190-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-04-12 | — | — | US | disclosed |
| US-20120076997-A1 | ACTINIC-RAY- OR RADIATION-SENSITIVE RESIN COMPOSITION, ACTINIC-RAY- OR RADIATION-SENSITIVE FILM THEREFROM AND METHOD OF FORMING PATTERN | FUJIFILM CORPORATION (JP) | 2012-03-29 | — | — | US | disclosed |
| US-20120070778-A1 | RESIN, RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-03-22 | — | — | US | disclosed |
| US-20120052443-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20120052440-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-03-01 | — | — | US | disclosed |
| US-20120034563-A1 | RESIST COMPOSITION AND METHOD FOR PRODUCING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-02-09 | — | — | US | disclosed |
| US-8110336-B2 | Resin and chemically amplified resist composition comprising the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-02-07 | — | — | US | disclosed |
| US-20120028188-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2012-02-02 | — | — | US | disclosed |
| US-20110200936-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-18 | — | — | US | disclosed |
| US-20110200940-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-08-18 | — | — | US | disclosed |
| US-20110171575-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-07-14 | — | — | US | disclosed |
| US-20110117493-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2011-05-19 | — | — | US | disclosed |
| US-20110111342-A1 | PHOTORESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY LIMITED (JP) | 2011-05-12 | — | — | US | disclosed |
| US-20100330497-A1 | CHEMICALLY AMPLIFIED PHOTORESIST COMPOSITION AND METHOD FOR FORMING RESIST PATTERN | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-12-30 | — | — | US | disclosed |
| US-20100075257-A1 | Resin and Chemically Amplified Resist Composition Comprising the Same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2010-03-25 | — | — | US | disclosed |
| US-20090263742-A1 | liquid immersion lithography, solves problem of defect caused by residual fluid droplets on the resist film; blend of resin containing no fluorine and acid labile group, and an acrylic fluoro-copolymer with units of a fluoromonomer and units of acid labile, lactone, or hydroxy-functional group | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-10-22 | — | — | US | disclosed |
| US-7566522-B2 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2009-07-28 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (5 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20120052440-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | C1S, C1R, CLIC1 | KDM4E 3963/4885NPC1 333/4885POLB 2496/4885 |
| US-20110200940-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | FRG1, AFF1, NHERF1 | KDM4E 3151/4885NPC1 405/4885POLB 2167/4885 |
| US-20110117493-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | C1S, C1R, AFF1 | KDM4E 3279/4885NPC1 835/4885POLB 3674/4885 |
| US-20120088190-A1 | SALT AND PHOTORESIST COMPOSITION COMPRISING THE SAME | AFF1, FGFR1, FRG1 | KDM4E 3654/4885NPC1 425/4885POLB 2638/4885 |
| US-20110200936-A1 | SALT AND PHOTORESIST COMPOSITION CONTAINING THE SAME | RER1, AFF1, FRG1 | KDM4E 3567/4885NPC1 221/4885POLB 2593/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.