SCHEMBL686547

SCHEMBL686547

O=C(COC(=O)C(F)(C(F)(F)F)S(=O)(=O)O)OCC12CC3CC(CC(O)(C3)C1)C2

nearest known ligand 0.37

Predicted protein targets (top 7)

geneUniProtsupporting neighboursconfidence
MAPT P10636 1/20 0.37
HPGD P15428 1/20 0.37
SCN9A Q15858 3/20 0.36
ALDH1A1 P00352 2/20 0.32
THRB P10828 1/20 0.32
NPC1 O15118 2/20 0.30
RAB9A P51151 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL4410258 0.92 MAPT (0.40) MAPTHPGDSCN9AALDH1A1THRB
SCHEMBL686909 0.89 SCN9A (0.36) MAPTHPGDSCN9AALDH1A1THRB
SCHEMBL686183 0.89 SCN9A (0.33) SCN9AALDH1A1THRB
SCHEMBL686181 0.89 SCN9A (0.37) MAPTHPGDSCN9AALDH1A1THRB
SCHEMBL686487 0.88 ALDH1A1 (0.39) MAPTSCN9AALDH1A1
SCHEMBL787217 0.84 MAPT (0.38) MAPTHPGDSCN9AALDH1A1THRB
SCHEMBL685261 0.83 ALDH1A1 (0.36) SCN9AALDH1A1THRBNPC1RAB9A
SCHEMBL685892 0.82 ALDH1A1 (0.37) SCN9AALDH1A1THRBNPC1RAB9A
SCHEMBL686292 0.82 ALDH1A1 (0.37) SCN9AALDH1A1THRBNPC1RAB9A
SCHEMBL686186 0.82 ALDH1A1 (0.36) SCN9AALDH1A1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 113 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9726976-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2017-08-08 US disclosed
US-9268226-B2 Resin, resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-23 US disclosed
US-9260407-B2 Salt and photoresist composition comprising the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-02-16 US disclosed
US-9229320-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2016-01-05 US disclosed
US-9221785-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-12-29 US disclosed
US-9063414-B2 Photoresist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-23 US disclosed
US-9051405-B2 Resin and resist composition SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-06-09 US disclosed
US-20150132698-A1 RESIN AND RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-05-14 US disclosed
US-8993210-B2 Salt and photoresist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2015-03-31 US disclosed
US-8921029-B2 Resist composition and method for producing resist pattern SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2014-12-30 US disclosed
US-7566522-B2 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2009-07-28 US disclosed
US-20080274426-A1 Using acrylic ester and sulfonium said salt; high resolution semiconductors; microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-11-06 US disclosed
US-7439006-B2 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-21 US disclosed
US-20080248423-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-10-09 US disclosed
US-20080220369-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-11 US disclosed
US-20080213695-A1 Lithography; semiconductor microfabrication SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-09-04 US disclosed
US-20080193874-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-08-14 US disclosed
US-20080176168-A1 CHEMICALLY AMPLIFIED RESIST COMPOSITION SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-24 US disclosed
US-20080166660-A1 Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-07-10 US disclosed
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SUMITOMO CHEMICAL COMPANY, LIMITED (JP) 2008-03-27 US disclosed

Patent text — is the patent's own abstract consistent with the prediction?

For each of this compound's patents that has machine-readable text (1 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.

PatentTitleText reads most aboutPredicted target · text-rank
US-20080076063-A1 Salt suitable for an acid generator and a chemically amplified positive resist composition containing the same SLC26A3, HCN3, NHERF1 MAPT 4446/4885HPGD 3765/4885SCN9A 308/4885

“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.