Predicted protein targets (top 20)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | SCN9A | Q15858 | 2/20 | 0.36 |
| ▸ | MEN1 | O00255 | 4/20 | 0.35 |
| ▸ | KMT2A | Q03164 | 4/20 | 0.35 |
| ▸ | NPC1 | O15118 | 1/20 | 0.35 |
| ▸ | RAB9A | P51151 | 1/20 | 0.35 |
| ▸ | CYP1A2 | P05177 | 1/20 | 0.33 |
| ▸ | CYP2D6 | P10635 | 1/20 | 0.33 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.33 |
| ▸ | CYP2C19 | P33261 | 1/20 | 0.33 |
| ▸ | HIF1A | Q16665 | 1/20 | 0.33 |
| ▸ | HSD17B10 | Q99714 | 1/20 | 0.33 |
| ▸ | KDM4E | B2RXH2 | 1/20 | 0.32 |
| ▸ | ALDH1A1 | P00352 | 1/20 | 0.32 |
| ▸ | LMNA | P02545 | 1/20 | 0.32 |
| ▸ | MAPT | P10636 | 1/20 | 0.32 |
| ▸ | HPGD | P15428 | 1/20 | 0.32 |
| ▸ | HTT | P42858 | 1/20 | 0.32 |
| ▸ | EPHX2 | P34913 | 3/20 | 0.32 |
| ▸ | MEP1B | Q16820 | 1/20 | 0.31 |
| ▸ | SIRT5 | Q9NXA8 | 1/20 | 0.31 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL14390068 | 1.00 | SCN9A (0.36) | SCN9AMEN1KMT2ANPC1RAB9A | |
| SCHEMBL686484 | 0.91 | TDP1 (0.35) | SCN9AMEN1KMT2ANPC1RAB9A | |
| SCHEMBL10151016 | 0.91 | CYP1A2 (0.31) | SCN9AMEN1KMT2ANPC1RAB9A | |
| SCHEMBL24908768 | 0.88 | ALDH1A1 (0.32) | ALDH1A1L3MBTL1 | |
| SCHEMBL20860455 | 0.87 | — | — | |
| SCHEMBL14389928 | 0.86 | SCN9A (0.35) | SCN9AMEN1KMT2ANPC1RAB9A | |
| SCHEMBL14389926 | 0.86 | SCN9A (0.35) | SCN9AMEN1KMT2ANPC1RAB9A | |
| SCHEMBL13425018 | 0.83 | — | — | |
| SCHEMBL686217 | 0.82 | MEN1 (0.38) | SCN9AMEN1KMT2ANPC1RAB9A | |
| SCHEMBL13477388 | 0.78 | MEN1 (0.35) | SCN9AMEN1KMT2ANPC1RAB9A |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 214 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10766992-B2 | Resin and resist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2020-09-08 | — | — | US | disclosed |
| US-10377692-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2019-08-13 | — | — | US | disclosed |
| US-9726976-B2 | Photoresist composition | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-08-08 | — | — | US | disclosed |
| US-9671693-B2 | Resist composition and method for producing resist pattern | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2017-06-06 | — | — | US | disclosed |
| US-20170115566-A1 | RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2017-04-27 | — | — | US | disclosed |
| EP-2356517-B1 | ACTINIC RAY-SENSITIVE OR RADIATION-SENSITIVE RESIN COMPOSITION AND PATTERN FORMING METHOD USING THE SAME | FUJIFILM CORP (JP) | 2017-01-25 | — | — | EP | disclosed |
| US-9551928-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9551928-B2 | Actinic-ray- or radiation-sensitive resin composition and method of forming pattern therewith | FUJIFILM CORPORATION (JP) | 2017-01-24 | — | — | US | disclosed |
| US-9500951-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-9500951-B2 | Actinic ray-sensitive or radiation-sensitive composition, resist film using the same, pattern forming method, method for manufacturing electronic device, and electronic device | FUJIFILM CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| US-20080220369-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-11 | — | — | US | disclosed |
| US-20080213695-A1 | Lithography; semiconductor microfabrication | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-09-04 | — | — | US | disclosed |
| US-20080193874-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-08-14 | — | — | US | disclosed |
| US-20080176168-A1 | CHEMICALLY AMPLIFIED RESIST COMPOSITION | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-24 | — | — | US | disclosed |
| US-20080166660-A1 | Having acrylic ester functionality with acid labile ester ring functionality and sulfonium sulfonate acid salt; high resolution semiconductor microfabrication patterns; excimer laser lithography | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2008-07-10 | — | — | US | disclosed |
| US-7301047-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-11-27 | — | — | US | disclosed |
| US-7301047-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-11-27 | — | — | US | disclosed |
| US-7301047-B2 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-11-27 | — | — | US | disclosed |
| US-20070100159-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
| US-20070100159-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | SUMITOMO CHEMICAL COMPANY, LIMITED (JP) | 2007-05-03 | — | — | US | disclosed |
Patent text — is the patent's own abstract consistent with the prediction?
For each of this compound's patents that has machine-readable text (3 of them — usually the abstract, not the full specification), we ask MedCPT which protein the text reads most about, and where the chemistry-predicted target lands among 4885 human targets. A high rank means the patent's own wording is consistent with the prediction — a weak, independent signal, not proof of activity.
| Patent | Title | Text reads most about | Predicted target · text-rank |
|---|---|---|---|
| US-20170115566-A1 | RESIST COMPOSITION, PATTERNING PROCESS, AND BARIUM, CESIUM AND CERIUM SALTS | CASR, LIFR, LBR | SCN9A 534/4885MEN1 2638/4885KMT2A 2108/4885 |
| US-20070100159-A1 | Salt suitable for an acid generator and a chemically amplified resist composition containing the same | HCN1, HCN3, HCN2 | SCN9A 128/4885MEN1 1156/4885KMT2A 1692/4885 |
| US-10377692-B2 | Photoresist composition | C1R, C1S, F12 | SCN9A 4676/4885MEN1 2101/4885KMT2A 2298/4885 |
“Text reads most about” is the patent abstract's nearest protein in MedCPT space (background-debiased). Only ~1.4% of patents have machine-readable text, so most compounds won't have this panel.