Known targets — ChEMBL curated mechanism
GABBR1GABBR2GABRA1GABRA2GABRA3GABRA4GABRA5GABRA6GABRB1GABRB2GABRB3GABRDGABREGABRG1GABRG2GABRG3GABRPGABRQGRIN1GRIN2AGRIN2BGRIN2CGRIN2DGRIN3AGRIN3BHMGCRMMP1MMP13MMP7MMP8PTGS1PTGS2ileSpolrplArplBrplCrplDrplErplFrplJrplKrplLrplMrplNrplOrplPrplQrplRrplSrplTrplUrplVrplWrplXrplYrpmArpmBrpmCrpmDrpmErpmFrpmGrpmHrpmIrpmJrpsArpsBrpsCrpsDrpsErpsFrpsGrpsHrpsIrpsJrpsKrpsLrpsMrpsNrpsOrpsPrpsQrpsRrpsSrpsTrpsUykgMykgO
The experimentally established mechanism targets of None. The predicted profile below is derived independently by chemical similarity — agreement is a validation signal, a miss is honest.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL11243524 | 0.87 | — | — | |
| SCHEMBL2432896 | 0.87 | — | — | |
| SCHEMBL5456316 | 0.87 | — | — | |
| SCHEMBL5067686 | 0.82 | — | — | |
| SCHEMBL10576947 | 0.82 | — | — | |
| SCHEMBL2679973 | 0.82 | — | — | |
| SCHEMBL7621984 | 0.82 | — | — | |
| SCHEMBL11674077 | 0.82 | — | — | |
| SCHEMBL36860 | 0.82 | — | — | |
| SCHEMBL16274558 | 0.82 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 179 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-11685991-B2 | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process | ASM IP HOLDING B.V. (NL) | 2023-06-27 | — | — | US | claimed |
| US-20210095372-A1 | A METHOD FOR DEPOSITING A RUTHENIUM-CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS | UNIVERSITEIT GENT (BE) | 2021-04-01 | — | — | US | claimed |
| EP-3737779-A1 | A METHOD FOR DEPOSITING A RUTHENIUM-CONTAINING FILM ON A SUBSTRATE BY A CYCLICAL DEPOSITION PROCESS | ASM IP Holding B.V. (NL) | 2020-11-18 | — | — | EP | claimed |
| CN-111699278-A | Method for depositing ruthenium-containing films on substrates by cyclic deposition process | ASM IP私人控股有限公司 | 2020-09-22 | — | — | CN | claimed |
| US-10354824-B2 | Piezoelectronic switch device for RF applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2019-07-16 | — | — | US | claimed |
| US-9881759-B2 | Piezoelectronic switch device for RF applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2018-01-30 | — | — | US | claimed |
| US-20170084413-A1 | PIEZOELECTRONIC SWITCH DEVICE FOR RF APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2017-03-23 | — | — | US | claimed |
| US-9472368-B2 | Piezoelectronic switch device for RF applications | INTERNATIONAL BUSINESS MACHINES CORPORATION (US) | 2016-10-18 | — | — | US | claimed |
| US-20160268083-A1 | PIEZOELECTRONIC SWITCH DEVICE FOR RF APPLICATIONS | INTERNATIONAL BUSINESS MACHINES CORPORATION | 2016-09-15 | — | — | US | claimed |
| US-9436159-B2 | Apparatus and method for displaying holographic three-dimensional image | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2016-09-06 | — | — | US | claimed |
| US-20090194805-A1 | Non-Volatile Memory Device | SAMSUNG ELECTRONICS CO., LTD. | 2009-08-06 | — | — | US | claimed |
| US-20090061538-A1 | Methods of forming ferroelectric capacitors and methods of manufacturing semiconductor devices using the same | SAMSUNG ELECTRONICS CO., LTD. | 2009-03-05 | — | — | US | claimed |
| US-20090035877-A1 | METHODS OF FORMING A FERROELECTRIC LAYER AND METHODS OF MANUFACTURING A FERROELECTRIC CAPACITOR INCLUDING THE SAME | SAMSUNG ELECTRONICS CO., LTD. | 2009-02-05 | — | — | US | claimed |
| US-20080001209-A1 | Non-volatile memory device and method of manufacturing the non-volatile memory device | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2008-01-03 | — | — | US | claimed |
| US-20070128775-A1 | Method of manufacturing a semiconductor device having a tungsten carbon nitride layer | SAMSUNG ELECTRONICS CO., LTD. | 2007-06-07 | — | — | US | claimed |
| US-20070059929-A1 | Method of forming a tantalum carbon nitride layer and method of manufacturing a semiconductor device using the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-03-15 | — | — | US | claimed |
| US-20070045689-A1 | Ferroelectric Structures Including Multilayer Lower Electrodes and Multilayer Upper Electrodes, and Methods of Manufacturing Same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-03-01 | — | — | US | claimed |
| US-20060273366-A1 | Methods of manufacturing ferroelectric capacitors and semiconductor devices | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-12-07 | — | — | US | claimed |
| US-20060214204-A1 | Ferroelectric structures and devices including upper/lower electrodes of different metals and methods of forming the same | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-09-28 | — | — | US | claimed |
| US-5470668-A | Metal oxide films on metal | THE REGENTS OF THE UNIVERSITY OF CALIF. (US) | 1995-11-28 | — | — | US | claimed |