SCHEMBL701203

SCHEMBL701203

C=C(CC1(CC)CC2CC1C1CCCC21)C(=O)O

nearest known ligand 0.31

Predicted protein targets (top 3)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 1/20 0.31
GAA P10253 1/20 0.31
MAPT P10636 1/20 0.31

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704455 0.81 ALDH1A1 (0.33) ALDH1A1GAAMAPT
SCHEMBL5388559 0.68 ALDH1A1 (0.31) ALDH1A1GAAMAPT
SCHEMBL5388565 0.68 ALDH1A1 (0.31) ALDH1A1GAAMAPT
SCHEMBL2117636 0.67 ALDH1A1 (0.31) ALDH1A1GAAMAPT
SCHEMBL5675381 0.66 ALDH1A1 (0.39) ALDH1A1GAAMAPT
SCHEMBL14523975 0.66 ALDH1A1 (0.30) ALDH1A1GAAMAPT
SCHEMBL23067522 0.66 ALDH1A1 (0.41) ALDH1A1GAAMAPT
SCHEMBL701845 0.65 ARG1 (0.32)
SCHEMBL9609343 0.65 ALDH1A1 (0.33) ALDH1A1GAAMAPT
SCHEMBL23308957 0.65 ALDH1A1 (0.40) ALDH1A1GAAMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 32 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-9594303-B2 Resist pattern-forming method and photoresist composition JSR CORPORATION (JP) 2017-03-14 US disclosed
US-9500950-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2016-11-22 US disclosed
US-9348226-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2016-05-24 US disclosed
US-20160062237-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2016-03-03 US disclosed
US-9213236-B2 Fluorine-containing polymer, purification method, and radiation-sensitive resin composition JSR CORPORATION (JP) 2015-12-15 US disclosed
US-20150010866-A1 RESIST PATTERN-FORMING METHOD AND PHOTORESIST COMPOSITION JSR CORPORATION (JP) 2015-01-08 US disclosed
US-8808974-B2 Method for forming pattern JSR CORPORATION (JP) 2014-08-19 US disclosed
US-8758978-B2 Radiation-sensitive resin composition, resist pattern formation method, and polymer JSR CORPORATION (JP) 2014-06-24 US disclosed
US-20140162190-A1 FLUORINE-CONTAINING POLYMER, PURIFICATION METHOD, AND RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2014-06-12 US disclosed
US-8734904-B2 Methods of forming topographical features using segregating polymer mixtures INTERNATIONAL BUSINESS MACHINES CORPORATION (US) 2014-05-27 US disclosed
US-7521169-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2009-04-21 US disclosed
US-20070269754-A1 Acrylic Polymer and Radiation-Sensitive Resin Composition JSR CORPORATION (JP) 2007-11-22 US disclosed
US-7241552-B2 Resist composition comprising photosensitive polymer having lactone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2007-07-10 US disclosed
US-20060234153-A1 Radiation-sensitive resin composition JSR CORPORATION (JP) 2006-10-19 US disclosed
US-20060234154-A1 Mixture containing acid generator and free radical catalyst; acrylated ester monomer JSR CORPORATION (JP) 2006-10-19 US disclosed
US-7045267-B2 Resist composition comprising photosensitive polymer having lactone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2006-05-16 US disclosed
US-20050008975-A1 Chemical resistance; bonding strength; accuracte patterns; photolithography YOON KWANG-SUB (KR) 2005-01-13 US disclosed
US-20040018442-A1 Resist composition comprising photosensitive polymer having lactone in its backbone YOON KWANG-SUB (KR) 2004-01-29 US disclosed
US-6537727-B2 Improved dry etching resistance, adhesiveness to underlying material layers, line edge roughness of line patterns, contrast characteristics SAMSUNG ELECTRONICS CO., LTD. (KR) 2003-03-25 US disclosed
US-20020042016-A1 Resist composition comprising photosensitive polymer having loctone in its backbone SAMSUNG ELECTRONICS CO., LTD. (KR) 2002-04-11 US disclosed