Predicted protein targets (top 4)
| gene | UniProt | supporting neighbours | confidence | |
|---|---|---|---|---|
| ▸ | THRB | P10828 | 1/20 | 0.31 |
| ▸ | CYP2C9 | P11712 | 1/20 | 0.31 |
| ▸ | KMT2A | Q03164 | 1/20 | 0.30 |
| ▸ | SMN1; SMN2 | Q16637 | 1/20 | 0.30 |
Click a target to see other patent compounds predicted against it — the reverse direction, in place.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL1482224 | 1.00 | THRB (0.31) | THRBCYP2C9KMT2ASMN1; SMN2 | |
| SCHEMBL701766 | 0.88 | EPHX2 (0.31) | KMT2A | |
| SCHEMBL3869669 | 0.86 | EPHX2 (0.35) | KMT2A | |
| SCHEMBL2217958 | 0.85 | THRB (0.31) | THRBCYP2C9KMT2ASMN1; SMN2 | |
| SCHEMBL14798101 | 0.84 | THRB (0.32) | THRBCYP2C9 | |
| SCHEMBL7545692 | 0.80 | — | — | |
| SCHEMBL701492 | 0.80 | THRB (0.33) | THRBCYP2C9 | |
| SCHEMBL2832305 | 0.80 | THRB (0.33) | THRBCYP2C9 | |
| SCHEMBL14801409 | 0.80 | THRB (0.33) | THRBCYP2C9 | |
| SCHEMBL6744611 | 0.80 | THRB (0.33) | THRBCYP2C9 |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 39 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-20110177454-A1 | RESIST MATERIAL AND PATTERN FORMATION METHOD USING THE RESIST MATERIAL | PANASONIC CORPORATION (JP) | 2011-07-21 | — | — | US | claimed |
| EP-2016464-B1 | NEGATIVE PHOTORESIST COMPOSITIONS | MERCK PATENT GMBH (DE) | 2021-04-28 | — | — | EP | disclosed |
| US-10705424-B2 | Negative-working photoresist compositions for laser ablation and use thereof | MERCK PATENT GMBH (DE) | 2020-07-07 | — | — | US | disclosed |
| EP-3394674-B1 | NEGATIVE-WORKING PHOTORESIST COMPOSITIONS FOR LASER ABLATION AND PROCESSES USING THEM | AZ ELECTRONIC MAT LUXEMBOURG SARL (LU) | 2020-05-06 | — | — | EP | disclosed |
| EP-3511774-A1 | NEGATIVE-WORKING PHOTORESIST COMPOSITION FOR LASER ABLATION AND PROCESS USING IT | AZ Electronic Materials Luxembourg S.à.r.l. (LU) | 2019-07-17 | — | — | EP | disclosed |
| EP-3394674-A1 | NEGATIVE-WORKING PHOTORESIST COMPOSITIONS FOR LASER ABLATION AND PROCESSES USING THEM | AZ Electronic Materials Luxembourg S.à.r.l. (LU) | 2018-10-31 | — | — | EP | disclosed |
| US-9817311-B2 | Resist pattern-forming method, substrate-processing method, and photoresist composition | JSR CORPORATION (JP) | 2017-11-14 | — | — | US | disclosed |
| US-20170285475-A1 | NEGATIVE-WORKING PHOTORESIST COMPOSITIONS FOR LASER ABLATION AND USE THEREOF | AZ ELECTRONIC MATERIALS S.À R.L. (LU) | 2017-10-05 | — | — | US | disclosed |
| US-20170176856-A1 | NEGATIVE-WORKING PHOTORESIST COMPOSITIONS FOR LASER ABLATION AND USE THEREOF | AZ ELECTRONIC MATERIALS (LUXEMBOURG) S.A.R.L. (LU) | 2017-06-22 | — | — | US | disclosed |
| US-9500950-B2 | Fluorine-containing polymer, purification method, and radiation-sensitive resin composition | JSR CORPORATION (JP) | 2016-11-22 | — | — | US | disclosed |
| WO-2007110773-A2 | NEGATIVE PHOTORESIST COMPOSITIONS | AZ ELECTRONIC MATERIALS USA CORP. (DE) | 2007-10-04 | — | — | WO | disclosed |
| US-7241552-B2 | Resist composition comprising photosensitive polymer having lactone in its backbone | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2007-07-10 | — | — | US | disclosed |
| US-7045267-B2 | Resist composition comprising photosensitive polymer having lactone in its backbone | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2006-05-16 | — | — | US | disclosed |
| US-20050170276-A1 | Chemical-amplification positive-working photoresist composition | TOKYO OHKA KOGYO CO., LTD. (JP) | 2005-08-04 | — | — | US | disclosed |
| US-6861197-B2 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2005-03-01 | — | — | US | disclosed |
| US-20050008975-A1 | Chemical resistance; bonding strength; accuracte patterns; photolithography | YOON KWANG-SUB (KR) | 2005-01-13 | — | — | US | disclosed |
| US-20040018442-A1 | Resist composition comprising photosensitive polymer having lactone in its backbone | YOON KWANG-SUB (KR) | 2004-01-29 | — | — | US | disclosed |
| US-6537727-B2 | Improved dry etching resistance, adhesiveness to underlying material layers, line edge roughness of line patterns, contrast characteristics | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2003-03-25 | — | — | US | disclosed |
| US-20030008231-A1 | Polymers, resist compositions and patterning process | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2003-01-09 | — | — | US | disclosed |
| US-20020042016-A1 | Resist composition comprising photosensitive polymer having loctone in its backbone | SAMSUNG ELECTRONICS CO., LTD. (KR) | 2002-04-11 | — | — | US | disclosed |