SCHEMBL701575

SCHEMBL701575

CC(=CC12CCC(CC1)CC2)C(=O)O

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL479331 0.91
SCHEMBL158981 0.88 APLNR (0.30)
SCHEMBL1089100 0.88 APLNR (0.30)
SCHEMBL479280 0.88 APLNR (0.30)
SCHEMBL4799351 0.88 APLNR (0.30)
SCHEMBL4804368 0.82 CYP1A2 (0.30)
SCHEMBL4804374 0.82 CYP1A2 (0.30)
SCHEMBL7940709 0.77 CYP1A2 (0.32)
SCHEMBL157720 0.75 THRB (0.39)
SCHEMBL757168 0.75 THRB (0.39)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 9 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8808974-B2 Method for forming pattern JSR CORPORATION (JP) 2014-08-19 US disclosed
US-8431324-B2 Radiation-sensitive resin composition JSR CORPORATION (JP) 2013-04-30 US disclosed
US-8182977-B2 Polymer and positive-tone radiation-sensitive resin composition JSR CORPORATION (JP) 2012-05-22 US disclosed
US-8124314-B2 Radiation-sensitive composition JSR CORPORATION (JP) 2012-02-28 US disclosed
US-20110212401-A1 RADIATION-SENSITIVE RESIN COMPOSITION, AND RESIST PATTERN FORMATION METHOD JSR CORPORATION (JP) 2011-09-01 US disclosed
US-20100285405-A1 RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-11-11 US disclosed
US-20100239981-A1 POLYMER AND POSITIVE-TONE RADIATION-SENSITIVE RESIN COMPOSITION JSR CORPORATION (JP) 2010-09-23 US disclosed
US-20100221664-A1 RADIATION-SENSITIVE COMPOSITION JSR CORPORATION (JP) 2010-09-02 US disclosed
US-20100068650-A1 POSITIVE-WORKING RADIATION-SENSITIVE COMPOSITION AND METHOD FOR RESIST PATTERN FORMATION USING THE COMPOSITION JSR CORPORATION (JP) 2010-03-18 US disclosed