SCHEMBL702250

SCHEMBL702250

CCCCO[SiH](OCCCC)C(CCC)c1ccccc1

nearest known ligand 0.40

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.40
POLB P06746 1/20 0.38
AOC3 Q16853 2/20 0.36
CYP1A2 P05177 1/20 0.35
CYP2C9 P11712 1/20 0.35
CYP2C19 P33261 1/20 0.35
NPC1 O15118 2/20 0.35
RAB9A P51151 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
LMNA P02545 1/20 0.35
SIGMAR1 Q99720 1/20 0.34
TSHR P16473 1/20 0.34
TDP1 Q9NUW8 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
KDM4E B2RXH2 1/20 0.34
ALDH1A1 P00352 1/20 0.34
NPSR1 Q6W5P4 1/20 0.34
GPR88 Q9GZN0 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL706757 0.90 AOC3 (0.38) POLBAOC3CYP1A2LMNASIGMAR1
SCHEMBL706283 0.88 LTA4H (0.41) LTA4HPOLBCYP1A2CYP2C9CYP2C19
SCHEMBL20483787 0.87 POLB (0.41) LTA4HPOLBNPC1RAB9ASMN1; SMN2
SCHEMBL19470839 0.85 POLB (0.37) LTA4HPOLBNPC1RAB9ASMN1; SMN2
SCHEMBL703457 0.84 AOC3 (0.39) POLBAOC3LMNASIGMAR1L3MBTL1
SCHEMBL19470863 0.84 NPC1 (0.38) LTA4HPOLBNPC1RAB9ASMN1; SMN2
SCHEMBL19470875 0.84 NPC1 (0.38) LTA4HPOLBNPC1RAB9ASMN1; SMN2
SCHEMBL20483521 0.84 NPC1 (0.38) LTA4HPOLBNPC1RAB9ASMN1; SMN2
SCHEMBL19470871 0.84 NPC1 (0.38) LTA4HPOLBNPC1RAB9ASMN1; SMN2
SCHEMBL18108826 0.84 KDM4E (0.35) CYP1A2CYP2C19SMN1; SMN2LMNATDP1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed