SCHEMBL706283

SCHEMBL706283

CCCCO[SiH](OCCCC)C(CC)c1ccccc1

nearest known ligand 0.41

Predicted protein targets (top 18)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.41
LMNA P02545 2/20 0.37
FAAH O00519 1/20 0.36
CYP1A2 P05177 1/20 0.36
CYP2C9 P11712 1/20 0.36
CYP2C19 P33261 1/20 0.36
POLB P06746 1/20 0.36
NPC1 O15118 2/20 0.35
RAB9A P51151 2/20 0.35
SMN1; SMN2 Q16637 2/20 0.35
TSHR P16473 1/20 0.35
TDP1 Q9NUW8 1/20 0.35
L3MBTL1 Q9Y468 1/20 0.35
KDM4E B2RXH2 1/20 0.35
ALDH1A1 P00352 1/20 0.35
NPSR1 Q6W5P4 1/20 0.35
GPR88 Q9GZN0 1/20 0.35
CALM1 P0DP23 1/20 0.34

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL702246 0.89 LMNA (0.39) LMNACYP1A2TSHR
SCHEMBL702250 0.88 LTA4H (0.40) LTA4HLMNACYP1A2CYP2C9CYP2C19
SCHEMBL17937639 0.83 KDM4E (0.35) LMNACYP1A2CYP2C19NPC1RAB9A
SCHEMBL17937693 0.83 SMN1; SMN2 (0.33) LMNANPC1RAB9ASMN1; SMN2L3MBTL1
SCHEMBL706389 0.82 LTA4H (0.43) LTA4HLMNACYP1A2CYP2C9CYP2C19
SCHEMBL707897 0.82 LMNA (0.42) LMNAPOLB
SCHEMBL17937672 0.82 KMT2A (0.40) FAAH
SCHEMBL17937783 0.82 IDO1 (0.35) CYP1A2CYP2C19KDM4EALDH1A1NPSR1
SCHEMBL20483787 0.81 POLB (0.41) LTA4HLMNAPOLBNPC1RAB9A
SCHEMBL19470839 0.80 POLB (0.37) LTA4HLMNAPOLBNPC1RAB9A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed