SCHEMBL703457

SCHEMBL703457

CCCC(c1ccccc1)[SiH](OCC)OCC

nearest known ligand 0.39

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
AOC3 Q16853 2/20 0.39
LMNA P02545 1/20 0.35
POLB P06746 3/20 0.35
MEN1 O00255 1/20 0.34
KMT2A Q03164 1/20 0.34
L3MBTL1 Q9Y468 1/20 0.34
HRH1 P35367 4/20 0.33
HTR2A P28223 3/20 0.33
SIGMAR1 Q99720 1/20 0.33
MMP8 P22894 1/20 0.33
OPRM1 P35372 1/20 0.32
OPRD1 P41143 1/20 0.32
OPRK1 P41145 1/20 0.32
OPRL1 P41146 1/20 0.32
TRPA1 O75762 2/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19470827 0.89 POLB (0.42) AOC3LMNAPOLBHRH1HTR2A
SCHEMBL19470881 0.88 POLB (0.38) LMNAPOLBHTR2ASIGMAR1OPRM1
SCHEMBL706757 0.87 AOC3 (0.38) AOC3LMNAPOLBMEN1KMT2A
SCHEMBL19470866 0.86 HTR2A (0.39) POLBHTR2ASIGMAR1OPRM1OPRD1
SCHEMBL28399192 0.86 HTR2A (0.39) POLBHTR2ASIGMAR1OPRM1OPRD1
SCHEMBL20483793 0.86 HTR2A (0.39) POLBHTR2ASIGMAR1OPRM1OPRD1
SCHEMBL19470851 0.86 HTR2A (0.39) POLBHTR2ASIGMAR1OPRM1OPRD1
SCHEMBL19470830 0.86 HTR2A (0.39) POLBHTR2ASIGMAR1OPRM1OPRD1
SCHEMBL707897 0.85 LMNA (0.42) AOC3LMNAPOLBMEN1KMT2A
SCHEMBL702250 0.84 LTA4H (0.40) AOC3LMNAPOLBL3MBTL1SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-107075255-B Encapsulating material composition for LED 日产化学工业株式会社 2020-05-22 CN disclosed
US-10066059-B2 Sealing material composition for LED NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-09-04 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed