SCHEMBL702600

SCHEMBL702600

CC(=O)OCCC(C[SiH2]CCC[SiH2]CC(CCOC(C)=O)OC(C)=O)OC(C)=O

nearest known ligand 0.46

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.38
ALOX15 P16050 1/20 0.37
CHRM5 P08912 2/20 0.33
CHRM1 P11229 2/20 0.33
CHRM3 P20309 2/20 0.33
SMN1; SMN2 Q16637 2/20 0.33
TSHR P16473 2/20 0.33
PGR P06401 1/20 0.33
CHRM2 P08172 1/20 0.33
CHRM4 P08173 1/20 0.33
HTR1A P08908 1/20 0.33
CHRNB2 P17787 1/20 0.33
TBXA2R P21731 1/20 0.33
CHRNB4 P30926 1/20 0.33
CHRNA3 P32297 1/20 0.33
CHRNA7 P36544 1/20 0.33
CHRNA4 P43681 1/20 0.33
CHRNA10 Q9GZZ6 1/20 0.33
CHRNA9 Q9UGM1 1/20 0.33
TDP1 Q9NUW8 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704470 0.97 ALOX15 (0.40) ALDH1A1ALOX15CHRM5CHRM1CHRM3
SCHEMBL707214 0.93 ALOX15 (0.39) ALDH1A1ALOX15CHRM5CHRM1CHRM3
SCHEMBL713403 0.88 ALOX15 (0.38) ALDH1A1ALOX15CHRM5CHRM1CHRM3
SCHEMBL704161 0.82 TDP1 (0.43) ALDH1A1SMN1; SMN2TSHRTDP1PRKCA
SCHEMBL13825187 0.79 ALOX15 (0.44) ALDH1A1ALOX15CHRM5CHRM1CHRM3
SCHEMBL706747 0.79 TDP1 (0.43) ALDH1A1SMN1; SMN2TSHRTDP1PRKCA
SCHEMBL7757645 0.76 PRKCA (0.44) ALDH1A1ALOX15CHRM5CHRM1CHRM3
SCHEMBL11913587 0.76 ALDH1A1 (0.45) ALDH1A1ALOX15CHRM5CHRM1CHRM3
SCHEMBL18652575 0.76 TDP1 (0.47) ALDH1A1ALOX15CHRM5CHRM1CHRM3
SCHEMBL703649 0.76 AR (0.36) ALDH1A1ALOX15CHRM5CHRM1CHRM3

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed