⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL2769493 | 0.79 | — | — | |
| SCHEMBL706291 | 0.77 | — | — | |
| SCHEMBL3710008 | 0.75 | — | — | |
| SCHEMBL887759 | 0.73 | LMNA (0.37) | — | |
| SCHEMBL7886915 | 0.73 | LMNA (0.37) | — | |
| SCHEMBL6177166 | 0.73 | LMNA (0.32) | — | |
| SCHEMBL297858 | 0.73 | ALDH1A1 (0.32) | — | |
| SCHEMBL6423723 | 0.73 | — | — | |
| SCHEMBL3481905 | 0.73 | METAP1 (0.31) | — | |
| SCHEMBL5338716 | 0.73 | LMNA (0.46) | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 18 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| US-10995249-B2 | Tire with reduced cavity noise | HANKOOK TIRE CO., LTD. | 2021-05-04 | — | — | US | disclosed |
| US-10947430-B2 | Tire with reduced cavity noise | HANKOOK TIRE CO., LTD. | 2021-03-16 | — | — | US | disclosed |
| CN-108688415-B | Cavity noise reduction tire | 韩国轮胎株式会社 | 2020-08-21 | — | — | CN | disclosed |
| CN-108068561-B | Cavity Noise reduction tire | 韩国轮胎株式会社 | 2019-11-26 | — | — | CN | disclosed |
| EP-3321108-B1 | TIRE WITH REDUCED CAVITY NOISE | HANKOOK TIRE CO LTD (KR) | 2019-05-15 | — | — | EP | disclosed |
| US-20180282600-A1 | TIRE WITH REDUCED CAVITY NOISE | HANKOOK TIRE CO., LTD. (KR) | 2018-10-04 | — | — | US | disclosed |
| EP-3381712-A1 | TIRE WITH REDUCED CAVITY NOISE | Hankook Tire Co., Ltd. (KR) | 2018-10-03 | — | — | EP | disclosed |
| US-20180134933-A1 | TIRE WITH REDUCED CAVITY NOISE | HANKOOK TIRE CO., LTD. (KR) | 2018-05-17 | — | — | US | disclosed |
| EP-3321108-A1 | TIRE WITH REDUCED CAVITY NOISE | Hankook Tire Co., Ltd. (KR) | 2018-05-16 | — | — | EP | disclosed |
| US-9733397-B2 | Anti-reflection coat and optical device | TAMRON CO., LTD. (JP) | 2017-08-15 | — | — | US | disclosed |
| US-8546597-B2 | Organic silane compound for forming Si-containing film by plasma CVD and method for forming Si-containing film | SHIN-ETSU CHEMICAL CO., LTD (JP) | 2013-10-01 | — | — | US | disclosed |
| EP-2194060-B1 | Organic silane compounds for forming silicon-containing films by plasma CVD and method for forming silicon-containing films | SHINETSU CHEMICAL CO (JP) | 2013-07-17 | — | — | EP | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| EP-2194060-A1 | Organic silane compounds for forming silicon-containing films by plasma CVD and method for forming silicon-containing films | Shin-Etsu Chemical Co., Ltd. (JP) | 2010-06-09 | — | — | EP | disclosed |
| US-20100137626-A1 | ORGANIC SILANE COMPOUND FOR FORMING SI-CONTAINING FILM BY PLASMA CVD AND METHOD FOR FORMING SI-CONTAINING FILM | SHIN-ETSU CHEMICAL CO., LTD. (JP) | 2010-06-03 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |