SCHEMBL703222

SCHEMBL703222

Br[Si](CC[Si](Br)(c1ccccc1)c1ccccc1)(c1ccccc1)c1ccccc1

nearest known ligand 0.35

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 3/20 0.35
TRPA1 O75762 1/20 0.35
TSHR P16473 1/20 0.35
TDP1 Q9NUW8 2/20 0.33
MAPT P10636 1/20 0.33
ESR1 P03372 1/20 0.32
ESR2 Q92731 1/20 0.32
CALM1 P0DP23 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL707662 0.89 ALDH1A1 (0.32) ALDH1A1TRPA1TSHRTDP1MAPT
SCHEMBL705023 0.89 ALDH1A1 (0.32) ALDH1A1TRPA1TSHRTDP1MAPT
SCHEMBL704482 0.85 TP53 (0.35) ALDH1A1TSHRMAPTESR1ESR2
SCHEMBL708577 0.82 ALDH1A1 (0.35) ALDH1A1TRPA1TSHRTDP1MAPT
SCHEMBL18108273 0.81 SIGMAR1 (0.37) TSHR
SCHEMBL707095 0.78 TP53 (0.38) ALDH1A1TRPA1TSHRTDP1MAPT
SCHEMBL18108341 0.78 KCNH2 (0.42) ALDH1A1
SCHEMBL18108482 0.78 KCNH2 (0.42) ALDH1A1
SCHEMBL706954 0.77 ALDH1A1 (0.35) ALDH1A1TRPA1TSHRTDP1MAPT
SCHEMBL15301793 0.72 ALDH1A1 (0.33) ALDH1A1TSHRMAPT

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed