SCHEMBL704482

SCHEMBL704482

CCC[Si](Br)(c1ccccc1)c1ccccc1

nearest known ligand 0.37

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
TP53 P04637 1/20 0.35
KDM4E B2RXH2 1/20 0.33
ALDH1A1 P00352 1/20 0.33
GAA P10253 1/20 0.33
HPGD P15428 1/20 0.33
MAPT P10636 1/20 0.33
ESR1 P03372 2/20 0.32
ESR2 Q92731 2/20 0.32
SIGMAR1 Q99720 1/20 0.31
NR1H2 P55055 1/20 0.31
NR1H3 Q13133 1/20 0.31
KMT2A Q03164 1/20 0.31
TSHR P16473 1/20 0.31
PSIP1 O75475 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18108273 0.86 SIGMAR1 (0.37) SIGMAR1TSHR
SCHEMBL703222 0.85 ALDH1A1 (0.35) ALDH1A1MAPTESR1ESR2TSHR
SCHEMBL18108341 0.83 KCNH2 (0.42) TP53ALDH1A1SIGMAR1KMT2A
SCHEMBL18108482 0.83 KCNH2 (0.42) TP53ALDH1A1SIGMAR1KMT2A
SCHEMBL703998 0.81 TP53 (0.35) TP53KDM4EALDH1A1GAAHPGD
SCHEMBL708300 0.81 TP53 (0.35) TP53KDM4EALDH1A1GAAHPGD
SCHEMBL707095 0.80 TP53 (0.38) TP53KDM4EALDH1A1GAAHPGD
SCHEMBL707662 0.80 ALDH1A1 (0.32) ALDH1A1MAPTESR1ESR2SIGMAR1
SCHEMBL705023 0.80 ALDH1A1 (0.32) ALDH1A1MAPTESR1ESR2SIGMAR1
SCHEMBL3889886 0.75 NR1H2 (0.50) TP53KDM4EALDH1A1GAAHPGD

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed