SCHEMBL703370

SCHEMBL703370

CC(C)O[SiH](c1ccccc1)C(C)(C)C

nearest known ligand 0.33

Predicted protein targets (top 5)

geneUniProtsupporting neighboursconfidence
MAPK1 P28482 1/20 0.32
ALDH1A1 P00352 2/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
RIPK1 Q13546 1/20 0.31
ALOX15 P16050 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL18533267 0.84 ALDH1A1 (0.32) MAPK1ALDH1A1ALOX15
SCHEMBL27560122 0.80 TRPA1 (0.32) MAPK1RIPK1
SCHEMBL10516808 0.78 MAPK1 (0.37) MAPK1ALDH1A1ALOX15
SCHEMBL705887 0.76 MAPK1 (0.36) MAPK1ALDH1A1ALOX15
SCHEMBL704633 0.74 MAPK1 (0.34) MAPK1ALDH1A1ALOX15
SCHEMBL3888063 0.73 ALDH1A1 (0.35) ALDH1A1L3MBTL1
SCHEMBL7051181 0.73 ALDH1A1 (0.35) ALDH1A1L3MBTL1
SCHEMBL706107 0.72 CA4 (0.37) MAPK1ALDH1A1L3MBTL1RIPK1ALOX15
SCHEMBL706200 0.71 ALDH1A1 (0.34) MAPK1ALDH1A1L3MBTL1
SCHEMBL23985417 0.71 MAPK1 (0.32) MAPK1ALDH1A1ALOX15

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-100535054-C Silica film forming material, silica film and preparation method thereof FUJITSU LTD (JP) 2009-09-02 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1891757-A Silica film forming material, silica film and method of manufacturing the same FUJITSU LTD (JP) 2007-01-10 CN disclosed