SCHEMBL703610

SCHEMBL703610

CC[Si](OC(C)=O)(OC(C)=O)c1ccc([Si](CC)(OC(C)=O)OC(C)=O)cc1

nearest known ligand 0.35

Predicted protein targets (top 13)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 2/20 0.35
AR P10275 2/20 0.34
ESR2 Q92731 1/20 0.34
ALDH1A1 P00352 3/20 0.32
LMNA P02545 2/20 0.32
HSD17B10 Q99714 1/20 0.32
NPSR1 Q6W5P4 1/20 0.31
NR1H2 P55055 1/20 0.31
NR1H3 Q13133 1/20 0.31
CYP1A2 P05177 1/20 0.31
POLB P06746 1/20 0.30
GAA P10253 1/20 0.30
HPGD P15428 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27743550 0.92 ESR1 (0.48) ESR1ARESR2ALDH1A1LMNA
SCHEMBL704102 0.90 ALDH1A1 (0.41) ESR1ALDH1A1LMNAHSD17B10HPGD
SCHEMBL702253 0.83 NR1H2 (0.34) ESR1ESR2ALDH1A1LMNAHSD17B10
SCHEMBL703647 0.80 AR (0.38) ARALDH1A1NR1H2NR1H3
SCHEMBL705215 0.80 ESR1 (0.37) ESR1ARESR2ALDH1A1LMNA
SCHEMBL27769541 0.78 ALDH1A1 (0.35) ALDH1A1GAAHPGD
SCHEMBL712780 0.75 ALDH1A1 (0.42) ESR1ALDH1A1HSD17B10NPSR1GAA
SCHEMBL708008 0.75 ALDH1A1 (0.42) ESR1ALDH1A1HSD17B10GAAHPGD
SCHEMBL13089446 0.75 ALDH1A1 (0.36) ESR1ALDH1A1LMNAHSD17B10NPSR1
SCHEMBL705416 0.75 ALDH1A1 (0.39) ALDH1A1LMNANPSR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed