SCHEMBL705215

SCHEMBL705215

CC[Si](CC)(OC(C)=O)c1ccc([Si](CC)(CC)OC(C)=O)cc1

nearest known ligand 0.37

Predicted protein targets (top 19)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 2/20 0.37
ALDH1A1 P00352 4/20 0.33
LMNA P02545 2/20 0.33
HSD17B10 Q99714 1/20 0.33
AR P10275 2/20 0.32
NPSR1 Q6W5P4 1/20 0.31
ESR2 Q92731 1/20 0.31
NR1H2 P55055 1/20 0.31
NR1H3 Q13133 1/20 0.31
CYP1A2 P05177 1/20 0.31
HPGD P15428 1/20 0.31
GAA P10253 2/20 0.31
POLB P06746 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.30
TSHR P16473 1/20 0.30
SMN1; SMN2 Q16637 1/20 0.30
HDAC4 P56524 1/20 0.30
HDAC6 Q9UBN7 1/20 0.30
PTGS2 P35354 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705143 0.90 ALDH1A1 (0.42) ESR1ALDH1A1LMNAHSD17B10HPGD
SCHEMBL705844 0.83 ESR1 (0.35) ESR1ALDH1A1LMNAHSD17B10NPSR1
SCHEMBL703610 0.80 ESR1 (0.35) ESR1ALDH1A1LMNAHSD17B10AR
SCHEMBL704662 0.79 AR (0.39) ALDH1A1ARNR1H2NR1H3L3MBTL1
SCHEMBL27743550 0.74 ESR1 (0.48) ESR1ALDH1A1LMNAARESR2
SCHEMBL703232 0.74 ALDH1A1 (0.40) ALDH1A1LMNANPSR1L3MBTL1PTGS2
SCHEMBL706708 0.73 HPGD (0.34) ESR1ALDH1A1LMNAHSD17B10NPSR1
SCHEMBL702253 0.72 NR1H2 (0.34) ESR1ALDH1A1LMNAHSD17B10NPSR1
SCHEMBL706767 0.71 HPGD (0.38) ALDH1A1LMNAHPGDPOLBTSHR
SCHEMBL705277 0.71 HPGD (0.38) ALDH1A1LMNAHPGDPOLBTSHR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed