SCHEMBL702253

SCHEMBL702253

CCC[Si](OC(C)=O)(OC(C)=O)c1ccc([Si](CCC)(OC(C)=O)OC(C)=O)cc1

nearest known ligand 0.34

Predicted protein targets (top 12)

geneUniProtsupporting neighboursconfidence
NR1H2 P55055 1/20 0.34
NR1H3 Q13133 1/20 0.34
ESR1 P03372 1/20 0.34
ESR2 Q92731 1/20 0.34
ALDH1A1 P00352 4/20 0.33
NPSR1 Q6W5P4 1/20 0.32
MMP1 P03956 1/20 0.31
PTGS2 P35354 2/20 0.31
MTNR1A P48039 1/20 0.30
MTNR1B P49286 1/20 0.30
LMNA P02545 1/20 0.30
HSD17B10 Q99714 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705416 0.91 ALDH1A1 (0.39) ALDH1A1NPSR1PTGS2MTNR1AMTNR1B
SCHEMBL703647 0.89 AR (0.38) NR1H2NR1H3ALDH1A1MMP1PTGS2
SCHEMBL703610 0.83 ESR1 (0.35) NR1H2NR1H3ESR1ESR2ALDH1A1
SCHEMBL705844 0.82 ESR1 (0.35) NR1H2NR1H3ESR1ESR2ALDH1A1
SCHEMBL706197 0.80 PTGS2 (0.39) ALDH1A1PTGS2LMNA
SCHEMBL712780 0.80 ALDH1A1 (0.42) ESR1ALDH1A1NPSR1PTGS2MTNR1A
SCHEMBL27869537 0.79 ALDH1A1 (0.37) ALDH1A1NPSR1MTNR1AMTNR1BLMNA
SCHEMBL11339624 0.78 NAAA (0.43) ALDH1A1PTGS2LMNA
SCHEMBL706255 0.77 L3MBTL1 (0.41) ESR1ALDH1A1NPSR1PTGS2MTNR1A
SCHEMBL27743550 0.77 ESR1 (0.48) NR1H2ESR1ESR2ALDH1A1LMNA

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed