SCHEMBL703686

SCHEMBL703686

CC(=O)O[Si](CCCC[Si](OC(C)=O)(OC(C)=O)OC(C)=O)(OC(C)=O)OC(C)=O

nearest known ligand 0.36

Predicted protein targets (top 9)

geneUniProtsupporting neighboursconfidence
KDM4E B2RXH2 1/20 0.36
MAPK1 P28482 1/20 0.36
HIF1A Q16665 1/20 0.36
ALDH1A1 P00352 4/20 0.33
TSHR P16473 1/20 0.33
LMNA P02545 1/20 0.33
HSD17B10 Q99714 1/20 0.33
NPSR1 Q6W5P4 2/20 0.32
PAOX Q6QHF9 2/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL303979 0.97 KDM4E (0.40) KDM4EMAPK1HIF1AALDH1A1TSHR
SCHEMBL704685 0.94 KDM4E (0.36) KDM4EMAPK1HIF1AALDH1A1TSHR
SCHEMBL1535144 0.91 ALDH1A1 (0.43) ALDH1A1TSHRLMNA
SCHEMBL3237379 0.89 FAAH (0.43) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL1041201 0.89 FAAH (0.43) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL7058616 0.89 FAAH (0.43) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL3793805 0.89 FAAH (0.43) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL7775373 0.89 FAAH (0.43) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL6324952 0.89 FAAH (0.43) ALDH1A1TSHRLMNAHSD17B10
SCHEMBL7058668 0.89 FAAH (0.43) ALDH1A1TSHRLMNAHSD17B10

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 5 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-7141306-B1 Sol-gel composition and process for coating aerospace alloys CESSNA AIRCRAFT COMPANY (US) 2006-11-28 US disclosed