SCHEMBL707992

SCHEMBL707992

CCC(Oc1ccccc1)(Oc1ccccc1)[SiH2]c1ccc([SiH2]C(CC)(Oc2ccccc2)Oc2ccccc2)cc1

nearest known ligand 0.35

Predicted protein targets (top 14)

geneUniProtsupporting neighboursconfidence
CHRNB2 P17787 2/20 0.35
CHRNB4 P30926 2/20 0.35
CHRNA3 P32297 2/20 0.35
CHRNA7 P36544 2/20 0.35
CHRNA4 P43681 2/20 0.35
LTA4H P09960 4/20 0.34
CA4 P22748 1/20 0.33
TAAR1 Q96RJ0 1/20 0.32
KCNA3 P22001 1/20 0.31
TSHR P16473 1/20 0.31
L3MBTL1 Q9Y468 1/20 0.31
RIPK1 Q13546 1/20 0.30
PPARG P37231 1/20 0.30
PPARA Q07869 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704155 0.78 LTA4H (0.35) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL705986 0.78 LTA4H (0.35) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL705262 0.76 LTA4H (0.35) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL702540 0.76 LTA4H (0.35) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL703810 0.74 CA4 (0.37) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL702354 0.73 ALDH1A1 (0.31) TSHR
SCHEMBL702400 0.71
SCHEMBL703565 0.69
SCHEMBL3081094 0.69 LTA4H (0.40) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4
SCHEMBL9816269 0.69 LTA4H (0.40) CHRNB2CHRNB4CHRNA3CHRNA7CHRNA4

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed