⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.
Similar compounds — the chemically nearest patent molecules
Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.
| Compound | similarity | top predicted | shared targets | |
|---|---|---|---|---|
| SCHEMBL4250355 | 0.80 | LMNA (0.35) | — | |
| SCHEMBL9788854 | 0.78 | — | — | |
| SCHEMBL703114 | 0.75 | — | — | |
| SCHEMBL14841405 | 0.75 | — | — | |
| SCHEMBL6653509 | 0.72 | ALDH1A1 (0.33) | — | |
| SCHEMBL16497576 | 0.71 | — | — | |
| SCHEMBL706289 | 0.71 | — | — | |
| SCHEMBL29240642 | 0.71 | — | — | |
| SCHEMBL7579761 | 0.71 | — | — | |
| SCHEMBL19640937 | 0.71 | — | — |
Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.
Patent provenance — the patents this molecule appears in, and who filed them
Claimed or disclosed in 16 patents. claimed = in the patent's claims; disclosed = body only.
| Patent | Title | Assignee | Published | Priority | Filing | Country | Status |
|---|---|---|---|---|---|---|---|
| CN-108003770-A | A kind of water-based crackle paint | 湖南太子化工涂料有限公司 | 2018-05-08 | — | — | CN | claimed |
| CN-107972418-A | Cavity Noise reduction tire | 韩国轮胎株式会社 | 2018-05-01 | — | — | CN | claimed |
| CN-107365101-B | Use of aqueous emulsions based on propylethoxysilane oligomers in cement mixtures for reducing shrinkage behavior | 赢创运营有限公司 | 2021-10-08 | — | — | CN | disclosed |
| CN-109641482-A | The preparation of the cis- -1,4- polydiene of multiple silane functionals with the Si―H addition reaction in situ preparation by polymer glue | 株式会社普利司通 | 2019-04-16 | — | — | CN | disclosed |
| US-10259748-B2 | Use of aqueous emulsions based on propylethoxysilane oligomers as an additive in hydraulically setting cement compositions for reduction of shrinkage characteristics | EVONIK DEGUSSA GMBH (DE) | 2019-04-16 | — | — | US | disclosed |
| CN-108688415-A | Cavity Noise reduction tire | 韩国轮胎株式会社 | 2018-10-23 | — | — | CN | disclosed |
| CN-107972418-A | Cavity Noise reduction tire | 韩国轮胎株式会社 | 2018-05-01 | — | — | CN | disclosed |
| CN-105969178-B | Benzoxazine type super-hydrophobic nano silica and its preparation method and application | 济南大学 | 2018-05-01 | — | — | CN | disclosed |
| CN-104448691-B | A kind of manufacture biological source mixes method of advanced composite materials and products thereof | SP 先进工程材料私人有限公司 | 2017-12-01 | — | — | CN | disclosed |
| US-20170327422-A1 | USE OF AQUEOUS EMULSIONS BASED ON PROPYLETHOXYSILANE OLIGOMERS AS AN ADDITIVE IN HYDRAULICALLY SETTING CEMENT COMPOSITIONS FOR REDUCTION OF SHRINKAGE CHARACTERISTICS | EVONIK DEGUSSA GMBH (DE) | 2017-11-16 | — | — | US | disclosed |
| CN-103185905-B | Antireflection film and optical element | TOTATSU CORP. (JP) | 2015-12-23 | — | — | CN | disclosed |
| CN-103185905-A | Anti-reflection film and optical element | TAMRON KK | 2013-07-03 | — | — | CN | disclosed |
| US-8124239-B2 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2012-02-28 | — | — | US | disclosed |
| US-20100155121-A1 | SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME | FUJITSU LIMITED (JP) | 2010-06-24 | — | — | US | disclosed |
| US-7659357-B2 | Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed | FUJITSU LIMITED (JP) | 2010-02-09 | — | — | US | disclosed |
| US-20070026689-A1 | Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same | FUJITSU LIMITED (JP) | 2007-02-01 | — | — | US | disclosed |