SCHEMBL706289

SCHEMBL706289

CCCCO[SiH2]C(C)C

nearest known ligand 0.00

⚠ Novel chemotype — no close known analogue (best Tanimoto < 0.3). Unexplored chemical space relative to ChEMBL.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL27646914 0.92 DNM1 (0.35)
SCHEMBL703114 0.83
SCHEMBL27626704 0.80 ADRB2 (0.35)
SCHEMBL6653509 0.78 ALDH1A1 (0.33)
SCHEMBL23093205 0.77 ADRB2 (0.36)
SCHEMBL10348469 0.77
SCHEMBL29240703 0.77
SCHEMBL705012 0.75 ADRB2 (0.35)
SCHEMBL23093136 0.75 ADRB2 (0.35)
SCHEMBL27907010 0.72 DNM1 (0.36)

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 13 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
CN-115215729-B Preparation method of polyester-grade coal-based ethylene glycol 中国石油化工股份有限公司 2024-07-02 CN disclosed
CN-115216342-B Preparation method of polyester-grade coal-based ethylene glycol 中国石油化工股份有限公司 2023-09-01 CN disclosed
CN-115215729-A Preparation method of polyester-grade coal-based ethylene glycol 中国石油化工股份有限公司 2022-10-21 CN disclosed
CN-115216342-A Preparation method of polyester-grade coal-based ethylene glycol 中国石油化工股份有限公司 2022-10-21 CN disclosed
CN-108068561-A Cavity Noise reduction tire 韩国轮胎株式会社 2018-05-25 CN disclosed
CN-103185905-B Antireflection film and optical element TOTATSU CORP. (JP) 2015-12-23 CN disclosed
CN-103185905-A Anti-reflection film and optical element TAMRON KK 2013-07-03 CN disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
CN-101472959-A Ziegler-Natta catalyst with in situ-generated donor NOVOLEN TECH HOLDINGS CV (NL) 2009-07-01 CN disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
CN-1739190-A Fluorine-free plasma curing method for porous Low-K material AXCELIS TECH INC (US) 2006-02-22 CN disclosed