SCHEMBL704094

SCHEMBL704094

CC[Si](CC)(CCCC[Si](CC)(CC)Oc1ccccc1)Oc1ccccc1

nearest known ligand 0.38

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 4/20 0.38
KCNA3 P22001 1/20 0.38
CA4 P22748 1/20 0.36
KCNH2 Q12809 2/20 0.35
RECQL P46063 1/20 0.35
HTR1B P28222 1/20 0.34
L3MBTL1 Q9Y468 2/20 0.33
CHRNB2 P17787 2/20 0.33
CHRNB4 P30926 2/20 0.33
CHRNA3 P32297 2/20 0.33
CHRNA7 P36544 2/20 0.33
CHRNA4 P43681 2/20 0.33
TSHR P16473 1/20 0.33
MLNR O43193 1/20 0.32
NR1I2 O75469 1/20 0.32
ESR1 P03372 1/20 0.32
NR3C1 P04150 1/20 0.32
PGR P06401 1/20 0.32
ADRB2 P07550 1/20 0.32
CHRM2 P08172 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL704883 0.96 LTA4H (0.38) LTA4HKCNA3CA4KCNH2RECQL
SCHEMBL705618 0.91 LTA4H (0.39) LTA4HKCNA3CA4KCNH2RECQL
SCHEMBL7992033 0.89 LTA4H (0.38) LTA4HKCNA3KCNH2RECQLHTR1B
SCHEMBL713108 0.87 CA4 (0.42) LTA4HKCNA3CA4KCNH2HTR1B
SCHEMBL710818 0.86 LTA4H (0.46) LTA4HKCNA3KCNH2RECQLTSHR
SCHEMBL19816764 0.86 LTA4H (0.47) LTA4HKCNA3KCNH2MLNRNR1I2
SCHEMBL712146 0.86 LTA4H (0.41) LTA4HKCNA3CA4KCNH2RECQL
SCHEMBL9843707 0.84 ALDH1A1 (0.33) LTA4HKCNA3L3MBTL1TSHR
SCHEMBL19816788 0.84 LTA4H (0.46) LTA4HKCNH2TSHRMLNRNR1I2
SCHEMBL706648 0.83 LTA4H (0.47) LTA4HKCNA3CA4KCNH2RECQL

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed