SCHEMBL704146

SCHEMBL704146

CC(C)(C)c1ccccc1O[SiH](c1ccccc1)c1ccccc1

nearest known ligand 0.43

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
ALDH1A1 P00352 6/20 0.43
KDM4E B2RXH2 4/20 0.43
GAA P10253 3/20 0.43
RXRA P19793 1/20 0.43
RXRB P28702 1/20 0.43
RXRG P48443 1/20 0.43
TDP1 Q9NUW8 4/20 0.42
ATM Q13315 1/20 0.42
CYP1A2 P05177 1/20 0.38
CYP2D6 P10635 1/20 0.38
CYP2C19 P33261 1/20 0.38
HSD17B10 Q99714 1/20 0.38
TSHR P16473 1/20 0.38
NPSR1 Q6W5P4 2/20 0.37
HTT P42858 2/20 0.36
MAPK1 P28482 1/20 0.36
MAPT P10636 2/20 0.36
NISCH Q9Y2I1 1/20 0.36
RBP4 P02753 2/20 0.35
MEN1 O00255 1/20 0.35

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL8173016 0.78 RXRA (0.42) ALDH1A1KDM4EGAARXRARXRB
SCHEMBL7994314 0.74 CYP1A2 (0.34) ALDH1A1KDM4EGAARXRARXRB
SCHEMBL8477975 0.74 ALDH1A1 (0.32) ALDH1A1KDM4EGAARXRARXRB
SCHEMBL28297290 0.74 CA1 (0.56) ALDH1A1RXRATDP1CYP1A2TSHR
SCHEMBL3295364 0.73 ALDH1A1 (0.38) ALDH1A1KDM4EGAARXRARXRB
SCHEMBL127278 0.72 ALDH1A1 (0.48) ALDH1A1KDM4EGAARXRARXRB
SCHEMBL30500977 0.72 ALDH1A1 (0.48) ALDH1A1KDM4EGAARXRARXRB
SCHEMBL8931196 0.70 ALDH1A1 (0.35) ALDH1A1KDM4EGAARXRARXRB
SCHEMBL6933536 0.70 ALDH1A1 (0.46) ALDH1A1KDM4EGAARXRARXRB
SCHEMBL29771456 0.70 CA2 (0.57) ALDH1A1KDM4EGAARXRARXRB

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed