SCHEMBL704369

SCHEMBL704369

CO[SiH](CCCCc1ccccc1)OC

nearest known ligand 0.48

Predicted protein targets (top 8)

geneUniProtsupporting neighboursconfidence
L3MBTL1 Q9Y468 2/20 0.47
MAOA P21397 1/20 0.47
SIGMAR1 Q99720 7/20 0.46
MAOB P27338 2/20 0.45
IDO1 P14902 1/20 0.44
TDP1 Q9NUW8 1/20 0.42
MEN1 O00255 1/20 0.42
KMT2A Q03164 1/20 0.42

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19470840 0.98 SIGMAR1 (0.48) L3MBTL1MAOASIGMAR1MAOBTDP1
SCHEMBL6325312 0.98 SIGMAR1 (0.48) L3MBTL1MAOASIGMAR1MAOBTDP1
SCHEMBL3110910 0.98 SIGMAR1 (0.48) L3MBTL1MAOASIGMAR1MAOBTDP1
SCHEMBL19470822 0.98 SIGMAR1 (0.48) L3MBTL1MAOASIGMAR1MAOBTDP1
SCHEMBL19470846 0.98 SIGMAR1 (0.48) L3MBTL1MAOASIGMAR1MAOBTDP1
SCHEMBL19470849 0.98 SIGMAR1 (0.48) L3MBTL1MAOASIGMAR1MAOBTDP1
SCHEMBL705764 0.94 IDO1 (0.45) L3MBTL1MAOASIGMAR1MAOBIDO1
SCHEMBL296206 0.85 ALDH1A1 (0.42) IDO1TDP1
SCHEMBL4129114 0.81 SIGMAR1 (0.59) SIGMAR1MEN1KMT2A
SCHEMBL17937838 0.81 TAAR1 (0.41) L3MBTL1SIGMAR1IDO1MEN1KMT2A

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 22 patents — showing the first 20. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-20240270915-A1 SILICA-COATED CELLULOSE NANOFIBER MODIFIED WITH HYDROPHOBIC FUNCTIONAL GROUP AND PRESSURE SENSITIVE ADHESIVE COMPRISING THE SAME KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION (KR) 2024-08-15 US claimed
EP-2216682-B1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST ADEKA CORP (JP) 2013-07-17 EP claimed
US-20240270915-A1 SILICA-COATED CELLULOSE NANOFIBER MODIFIED WITH HYDROPHOBIC FUNCTIONAL GROUP AND PRESSURE SENSITIVE ADHESIVE COMPRISING THE SAME KYUNGPOOK NATIONAL UNIVERSITY INDUSTRY-ACADEMIC COOPERATION FOUNDATION (KR) 2024-08-15 US disclosed
CN-107075255-B Encapsulating material composition for LED 日产化学工业株式会社 2020-05-22 CN disclosed
US-10066059-B2 Sealing material composition for LED NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-09-04 US disclosed
CN-108472598-A For treatment fluid or the material of fluid mixture 西拉纳有限公司 2018-08-31 CN disclosed
US-20170306095-A1 SEALING MATERIAL COMPOSITION FOR LED NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-10-26 US disclosed
CN-106999980-A Liquid coating composition for use in a method for forming a superhydrophobic, superoleophobic or superamphiphobic layer 西拉纳有限公司 2017-08-01 CN disclosed
CN-104011083-B Use the polymerization of the particle containing surfactant 住友化学株式会社 2016-12-21 CN disclosed
US-8968458-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2015-03-03 US disclosed
US-8808446-B2 Composition for resist underlayer film and process for producing same JSR CORPORATION (JP) 2014-08-19 US disclosed
US-8211619-B2 Positive photosensitive composition, positive permanent resist, and method for producing positive permanent resist ADEKA CORPORATION (JP) 2012-07-03 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100273104-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST A D E K A (ADEKA CORPORATION) (JP) 2010-10-28 US disclosed
EP-2216682-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST Adeka Corporation (JP) 2010-08-11 EP disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20090050020-A1 COMPOSITION FOR RESIST UNDERLAYER FILM AND PROCESS FOR PRODUCING SAME JSR CORPORATION (JP) 2009-02-26 US disclosed
EP-1855159-A1 COMPOSITION FOR UNDERLAYER FILM OF RESIST AND PROCESS FOR PRODUCING THE SAME JSR Corporation (JP) 2007-11-14 EP disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed