SCHEMBL704370

SCHEMBL704370

CCCC(c1ccccc1)[SiH](OC)OC

nearest known ligand 0.40

Predicted protein targets (top 15)

geneUniProtsupporting neighboursconfidence
AOC3 Q16853 2/20 0.40
LMNA P02545 1/20 0.36
HTR2A P28223 5/20 0.34
HRH1 P35367 5/20 0.34
SIGMAR1 Q99720 1/20 0.34
KMT2A Q03164 1/20 0.33
MMP8 P22894 1/20 0.33
OPRM1 P35372 1/20 0.33
OPRD1 P41143 1/20 0.33
OPRK1 P41145 1/20 0.33
OPRL1 P41146 1/20 0.33
POLB P06746 1/20 0.33
IDO1 P14902 1/20 0.33
TDO2 P48775 1/20 0.33
RIPK1 Q13546 1/20 0.32

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL19470844 0.89 POLB (0.40) LMNAHTR2ASIGMAR1OPRM1OPRD1
SCHEMBL3110907 0.89 SIGMAR1 (0.40) LMNAHTR2ASIGMAR1OPRM1OPRD1
SCHEMBL19470848 0.87 HTR2A (0.41) HTR2ASIGMAR1OPRM1OPRD1OPRK1
SCHEMBL19470845 0.87 HTR2A (0.41) HTR2ASIGMAR1OPRM1OPRD1OPRK1
SCHEMBL19470821 0.87 HTR2A (0.41) HTR2ASIGMAR1OPRM1OPRD1OPRK1
SCHEMBL19470838 0.87 HTR2A (0.41) HTR2ASIGMAR1OPRM1OPRD1OPRK1
SCHEMBL705765 0.84 LMNA (0.43) AOC3LMNAHTR2AHRH1KMT2A
SCHEMBL2244555 0.83 HRH1 (0.50) HTR2AHRH1IDO1TDO2RIPK1
SCHEMBL703457 0.83 AOC3 (0.39) AOC3LMNAHTR2AHRH1SIGMAR1
SCHEMBL706757 0.81 AOC3 (0.38) AOC3LMNAHTR2AHRH1SIGMAR1

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 12 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
EP-2216682-B1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST ADEKA CORP (JP) 2013-07-17 EP claimed
CN-107075255-B Encapsulating material composition for LED 日产化学工业株式会社 2020-05-22 CN disclosed
US-10066059-B2 Sealing material composition for LED NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2018-09-04 US disclosed
US-20170306095-A1 SEALING MATERIAL COMPOSITION FOR LED NISSAN CHEMICAL INDUSTRIES, LTD. (JP) 2017-10-26 US disclosed
EP-2216682-B1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST ADEKA CORP (JP) 2013-07-17 EP disclosed
US-8211619-B2 Positive photosensitive composition, positive permanent resist, and method for producing positive permanent resist ADEKA CORPORATION (JP) 2012-07-03 US disclosed
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100273104-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST A D E K A (ADEKA CORPORATION) (JP) 2010-10-28 US disclosed
EP-2216682-A1 POSITIVE PHOTOSENSITIVE COMPOSITION, POSITIVE PERMANENT RESIST, AND METHOD FOR PRODUCING POSITIVE PERMANENT RESIST Adeka Corporation (JP) 2010-08-11 EP disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed