SCHEMBL704749

SCHEMBL704749

CCO[Si](CC)(OCC)c1ccc([Si](CC)(OCC)OCC)cc1

nearest known ligand 0.36

Predicted protein targets (top 6)

geneUniProtsupporting neighboursconfidence
ESR1 P03372 2/20 0.36
AR P10275 1/20 0.34
ESR2 Q92731 1/20 0.34
NQO1 P15559 1/20 0.32
NR1H2 P55055 1/20 0.30
NR1H3 Q13133 1/20 0.30

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL17937859 0.89 CYP2A6 (0.33) ESR1
SCHEMBL27722860 0.89 ESR1 (0.54) ESR1ARESR2
SCHEMBL115876 0.88 LTA4H (0.34) ESR1ESR2
SCHEMBL8679101 0.84 ALDH1A1 (0.41)
SCHEMBL707479 0.80 ESR1 (0.33) ESR1ARESR2
SCHEMBL702398 0.80 NR1H2 (0.34) ESR1ESR2NR1H2NR1H3
SCHEMBL19809337 0.80 LMNA (0.34)
SCHEMBL15209480 0.78
SCHEMBL3295855 0.78 TSHR (0.32)
SCHEMBL705317 0.77 CYP2D6 (0.37) AR

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 6 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed
US-20040028978-A1 Proton conducting membrane, method for producing the same, and fuel cell using the same NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY (JP) 2004-02-12 US disclosed
EP-1334993-A2 Proton conducting membrane, method for producing the same, and fuel cell using the same National Institute of Advanced Industrial Science and Technology (JP) 2003-08-13 EP disclosed