SCHEMBL704789

SCHEMBL704789

CCCCOC(OCCCC)[SiH2]c1ccc([SiH2]C(OCCCC)OCCCC)cc1

nearest known ligand 0.35

Predicted protein targets (top 20)

geneUniProtsupporting neighboursconfidence
LTA4H P09960 2/20 0.34
CA1 P00915 1/20 0.34
CA2 P00918 1/20 0.34
CYP1A2 P05177 3/20 0.34
TSHR P16473 3/20 0.34
CYP2C19 P33261 3/20 0.34
LMNA P02545 2/20 0.34
ESR1 P03372 2/20 0.34
CYP2D6 P10635 1/20 0.34
MAPK1 P28482 1/20 0.34
NR1H2 P55055 1/20 0.34
RNASEL Q05823 1/20 0.34
SMN1; SMN2 Q16637 1/20 0.34
CYP2C9 P11712 2/20 0.33
GAA P10253 1/20 0.33
RAB9A P51151 1/20 0.33
TP53 P04637 1/20 0.33
CYP3A4 P08684 1/20 0.33
PDE4D Q08499 1/20 0.33
NR5A1 Q13285 1/20 0.33

Click a target to see other patent compounds predicted against it — the reverse direction, in place.

Similar compounds — the chemically nearest patent molecules

Nearest neighbours by Morgan-fingerprint cosine across the patent-compound collection, with each neighbour's top predicted target and the predicted targets it shares with this molecule.

Compoundsimilaritytop predictedshared targets
SCHEMBL705704 0.87 LPL (0.30) LPLLIPG
SCHEMBL23493476 0.87 CHRNB2 (0.42) CA1CA2
SCHEMBL23493449 0.87 TSHR (0.34) CYP1A2TSHRCYP2C19LMNAESR1
SCHEMBL9804112 0.79 MAPT (0.36) CYP1A2TSHRCYP2C19LMNAMAPK1
SCHEMBL31094240 0.78 LMNA (0.36) LTA4HCYP1A2TSHRLMNACYP2D6
SCHEMBL23493431 0.77 ALDH1A1 (0.30) TSHRESR1
SCHEMBL23493395 0.75 TP53 (0.37) CYP2C19CYP2C9TP53CYP3A4
SCHEMBL23493443 0.74 CHRNB2 (0.41)
SCHEMBL29434708 0.74 HPGD (0.36) CYP1A2CYP2C19LMNASMN1; SMN2CYP2C9
SCHEMBL23493402 0.74 HPGD (0.36) CYP1A2CYP2C19LMNASMN1; SMN2CYP2C9

Similarity is cosine over the 2,048-bit Morgan fingerprint (≈ Tanimoto). Identical fingerprints score 1.00.

Patent provenance — the patents this molecule appears in, and who filed them

Claimed or disclosed in 4 patents. claimed = in the patent's claims; disclosed = body only.

PatentTitleAssigneePublishedPriorityFilingCountryStatus
US-8124239-B2 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2012-02-28 US disclosed
US-20100155121-A1 SILICA FILM FORMING MATERIAL, SILICA FILM AND METHOD OF MANUFACTURING THE SAME, MULTILAYER WIRING STRUCTURE AND METHOD OF MANUFACTURING THE SAME, AND SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME FUJITSU LIMITED (JP) 2010-06-24 US disclosed
US-7659357-B2 Precursor organosilicon polymer of 1,2-Bis(dimethylethoxysilyl)ethane, 1,4-bis(dimethylethoxysilyl)benzene, tetraethoxysilane, methyltriethoxysilane, phenyltriethoxysilane; dielectric (DE) films having etching/chemical/moisture resistance; adhesion; low DE constant; minimal wiring delay; high speed FUJITSU LIMITED (JP) 2010-02-09 US disclosed
US-20070026689-A1 Silica film forming material, silica film and method of manufacturing the same, multilayer wiring structure and method of manufacturing the same, and semiconductor device and method of manufacturing the same FUJITSU LIMITED (JP) 2007-02-01 US disclosed